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Diffusion von Ladungsträgern

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Halbleiterphysik

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Zusammenfassung

Die Diskussion von (4.10.8-11) hat gezeigt, daß ein Temperaturgradient in einem Leiter einen Konzentrations-Gradienten ∇ rn und damit einen Diffusions-strom j= -eDn∇rn verursacht, wobei Dn infolge der Einstein-Relation (4.10.12) proportional zur Elektronenbeweglichkeit ist. In diesem Kapitel werden wir die Diffusion von injizierten Ladungsträgern bei örtlicher Variation der Dotierung untersuchen, wie sie für p-n Übergänge und Transistoren typisch ist.

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Authors and Affiliations

  1. Ludwig-Boltzmann-Institut für Festkörperphysik, Universität Wien, Strudlhofgasse 4, A-1090, Wien, Österreich

    Prof. Dr. Karlheinz Seeger

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  1. Prof. Dr. Karlheinz Seeger
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© 1992 Springer Fachmedien Wiesbaden

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Seeger, K. (1992). Diffusion von Ladungsträgern. In: Halbleiterphysik. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-98553-8_5

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  • DOI: https://doi.org/10.1007/978-3-322-98553-8_5

  • Publisher Name: Vieweg+Teubner Verlag, Wiesbaden

  • Print ISBN: 978-3-322-98554-5

  • Online ISBN: 978-3-322-98553-8

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