Skip to main content
  • 133 Accesses

Zusammenfassung

Lichterzeugung in einem Halbleitermaterial mit direktem Übergang geschieht in einfachster Weise in einem in Flußrichtung gepolten n+p-Übergang in einer Doppelhetero(DH)-Struktur (Bild 4.1).

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 54.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 69.95
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literatur

  1. Goodfellow, R. C., Mobbitt, A. W.: Wide-bandwidth high-radiance gallium-arsenide light-emitting diodes for fibre-optic communication. Electron. Lett. 12 (1976) 50–51

    Article  Google Scholar 

  2. Grothe, H., Proebster, W., Harth, W.: Mg-doped InGaAsP/InP LEDs for high-bit-rate optical-communication systems. Electron. Lett. 15 (1979) 702–703.

    Article  Google Scholar 

  3. Van Hoof, C. et al.: Gigahertz modulation of tunneling-based GaAs light-emitters. IEEE Photon. Techn. Lett. 9 (1997) 1463–1465.

    Article  Google Scholar 

  4. Heinen, J. et al.: Proton bombarded GaAlAs/GaAs light emitting diodes. IEEE Trans. Electron Dev. 23 (1976) 1186–1187.

    Article  Google Scholar 

  5. Unger, H.-G.: Optische Nachrichtentechnik. Teil II: Komponenten, Systeme, Meßtechnik. Hüthig-Verlag, Heidelberg, 1985.

    Google Scholar 

  6. Depreter, B. et al.: InP microcavity LED emitting at 1,55µm. Conf. Proc. LEOS’ 97, vol. 1, 241–242

    Google Scholar 

  7. Schubert, E. et al.: Temperature and modulation characteristics of resonant-cavity light emitting diodes. J. Lightwave Techn. 14 (1996) 1721–1729

    Article  Google Scholar 

  8. Ettenberg, M. et al.: Very high radiance edge-emitting LED. IEEE J.Quantum Electron. 12 (1976) 360–364.

    Article  Google Scholar 

  9. Takayama, T. et al.: 100 mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure. IEEE J. Quantum Electron. 32 (1966) 1981–1987.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1998 Springer Fachmedien Wiesbaden

About this chapter

Cite this chapter

Harth, W., Grothe, H. (1998). Lumineszenz-Dioden (LED). In: Sende- und Empfangsdioden für die Optische Nachrichtentechnik. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-92779-8_4

Download citation

  • DOI: https://doi.org/10.1007/978-3-322-92779-8_4

  • Publisher Name: Vieweg+Teubner Verlag, Wiesbaden

  • Print ISBN: 978-3-519-06257-8

  • Online ISBN: 978-3-322-92779-8

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics