Abstract
We use an extended hydrodynamical model, recently proposed by Anile and Pennisi, to simulate a silicon submicron diode. The relaxation times are obtained by Monte Carlo data. The comparison of our simulations with the Monte Carlo ones shows that the viscosity plays a role in the modelling.
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© 1996 John Wiley & Sons Ltd and B. G. Teubner
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Anile, A.M., Muscato, O., Maccora, C., Pidatella, R.M. (1996). Hydrodynamical models for semiconductors. In: Neunzert, H. (eds) Progress in Industrial Mathematics at ECMI 94. Vieweg+Teubner Verlag. https://doi.org/10.1007/978-3-322-82967-2_40
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DOI: https://doi.org/10.1007/978-3-322-82967-2_40
Publisher Name: Vieweg+Teubner Verlag
Print ISBN: 978-3-322-82968-9
Online ISBN: 978-3-322-82967-2
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