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Investigation of X-Ray Attenuation Properties in Water Solutions of Sodium Tungstate Dihydrate and Silicotungstic Acid

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Recent Advances in Technology Research and Education (INTER-ACADEMIA 2018)

Abstract

Due to its outstanding photon attenuation features lead (Pb) is the most popular material which is used for radiation shielding and for radiation protection of individuals against ionizing radiation. However, Pb is very toxic and can cause serious health problems. Also recycling of lead containing materials is relative complicated. In order to overcome Pb related problems, researchers are looking for lead free materials possessing similar photon attenuation properties as lead and that can be used for the development and fabrication of radiation shielding elements and radiation protection equipment.

In this paper we discuss the investigation results of two tungsten containing water solutions: sodium tungstate dihydrate (Na2WO4 · 2H2O) and silicotungstic acid (H4SiW12O40 · xH2O). Aqueous solutions containing different concentrations of tungsten products were fabricated and their X-ray attenuation properties were investigated. Since these solutions were thought for application as the fillers in aquarium type radiation protection screens their lead equivalent was calculated. Radiation protection screen of this type were developed for application in interventional radiology departments. It was found, that the lead equivalent of investigated solutions was dependent on concentration of tungsten compounds. Solutions containing ≥30% of sodium tungstate and ≥45% of silicotungstic acid indicated lead equivalent ≥0.25 mmPb, thus meeting the requirements set for radiation protection equipment.

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Correspondence to Laurynas Gilys .

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Gilys, L., Adliene, D., Griskonis, E. (2019). Investigation of X-Ray Attenuation Properties in Water Solutions of Sodium Tungstate Dihydrate and Silicotungstic Acid. In: Laukaitis, G. (eds) Recent Advances in Technology Research and Education. INTER-ACADEMIA 2018. Lecture Notes in Networks and Systems, vol 53. Springer, Cham. https://doi.org/10.1007/978-3-319-99834-3_19

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