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XPS Study of the In/CdTe Interface Modified by Nanosecond Laser Irradiation

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Recent Advances in Technology Research and Education (INTER-ACADEMIA 2018)


The X-ray photoelectron spectroscopy (XPS) with 650 eV synchro-tron radiation was employed to study the In/CdTe diode detector structures formed by laser-induced doping and subjected to multiple Ar-ion etching from the In-coated side. The dependences of the peak areas in the high-resolution Cd 3d and In 3d XPS spectra on the etching number demonstrated the presence of Cd atoms in the In film and In dopant atoms in the CdTe near the In/CdTe inter-face. This was attributed to ultrafast mutual diffusion under laser action. The XPS results were direct evidence of incorporation of In dopant atoms into the surface region of the CdTe crystal and penetration of Cd atoms into the In film.

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This research was supported by the following international projects and programs: (1) “A sensor network for the localization and identification of radiation sources” (SENERA, grant SfP-984705) of the NATO Science for Peace and Security Programme; (2) the Academic Melting Pot Project at King Mongkut’s Institute of Technology Ladkrabang (KMITL), Bangkok, Thailand; (3) “Development of Cd(Zn)Te-based X/gamma-ray detectors with high resolution for security and diagnostics instruments” (grant No. 2035) of the 2018 Cooperative Research at Research Center of Biomedical Engineering, Japan.

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Correspondence to Kateryna Zelenska .

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Zelenska, K., Gnatyuk, V., Nakajima, H., Mekprasart, W., Pecharapa, W. (2019). XPS Study of the In/CdTe Interface Modified by Nanosecond Laser Irradiation. In: Laukaitis, G. (eds) Recent Advances in Technology Research and Education. INTER-ACADEMIA 2018. Lecture Notes in Networks and Systems, vol 53. Springer, Cham.

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