Abstract
The group-III nitride based semiconductors have proved their potential application in optoelectronic devices. The effects of layers thickness and doping on the photovoltaic cell parameters in p-In1−xGaxN/i-GaAs/n-In1−xGaxN hétérojunction solar cell have been investigated using solar cell capacitance simulator (SCAPS). The impacts of gallium (Ga) content, doping and thickness variation on the cell’s output parameters were extensively simulated. In this work, the p and n-In1−xGaxN band gap (Eg) are first defined and formulated as mathematical functions of gallium (Ga) content (“x”). Our numerical analysis highlights that the Eg value of 1.27 eV corresponding to x = 0.3 is optimal. Our results showed that the best structure must have a p-doped In0.7Ga0.3N layer, an active intrinsic GaAs layer, and n-doped In0.7Ga0.3N layer that have thicknesses of 0.15, 1.2 and 0.15 \( \upmu{\text{m}} \), respectively and doped with NA = 1016 cm−3 and ND = 1017 cm−3. Cells with these optimization results are found to give conversion efficiency of 25.88%.
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Acknowledgments
The authors acknowledge the use of SCAPS-1D program developed by Marc Burgelman and colleagues at the University of Gent in all the simulations reported in this study.
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Nassour, A., Kandouci, M., Belghachi, A. (2019). High Performance Analysis of Hetero-Junction In1−XGaXN/GaAs Solar Cell Using SCAPS. In: Chadli, M., Bououden, S., Ziani, S., Zelinka, I. (eds) Advanced Control Engineering Methods in Electrical Engineering Systems. ICEECA 2017. Lecture Notes in Electrical Engineering, vol 522. Springer, Cham. https://doi.org/10.1007/978-3-319-97816-1_23
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DOI: https://doi.org/10.1007/978-3-319-97816-1_23
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