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Growth of Optical Grade Germanium (Ge) Single Crystals by Czochralski Technique

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The Physics of Semiconductor Devices (IWPSD 2017)

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

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Abstract

Antimony (Sb) doped Ge crystals are used in the form lenses, windows and prisms in various infrared sensors. Present paper describes the growth of optical grade Ge single crystals by Czochralski technique covering the growth process modification and optimization for growing crystals of different diameters, Sb doping and complete characterization.

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References

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Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, Timarpur, 110054, Delhi, India

    Sudeep Verma, Arun Tanwar, Vinod Kumar Gandotra, Meenakshi Srivastava & R. K. Sharma

Authors
  1. Sudeep Verma
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  2. Arun Tanwar
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  3. Vinod Kumar Gandotra
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  4. Meenakshi Srivastava
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  5. R. K. Sharma
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Corresponding author

Correspondence to Sudeep Verma .

Editor information

Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Cite this paper

Verma, S., Tanwar, A., Gandotra, V.K., Srivastava, M., Sharma, R.K. (2019). Growth of Optical Grade Germanium (Ge) Single Crystals by Czochralski Technique. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_86

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