Skip to main content

MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering

  • 2155 Accesses

Part of the Springer Proceedings in Physics book series (SPPHY,volume 215)

Abstract

This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (IV) and photoresponse measurement on photodetector properties.

This is a preview of subscription content, access via your institution.

Buying options

Chapter
USD   29.95
Price excludes VAT (USA)
  • DOI: 10.1007/978-3-319-97604-4_149
  • Chapter length: 4 pages
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
eBook
USD   269.00
Price excludes VAT (USA)
  • ISBN: 978-3-319-97604-4
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
Hardcover Book
USD   349.99
Price excludes VAT (USA)
Fig. 149.1

References

  1. H.L. Liang, Z.X. Mei, Q.H. Zhang, L. Gu, S. Liang, Y.N. Hou, D.Q. Ye, C.Z. Gu, R.C. Yu, X.L. Du, Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors. Appl. Phys. Lett. 98(22), 221902 (2011)

    ADS  CrossRef  Google Scholar 

  2. R. Singh, P. Sharma, M.A. Khan, V. Garg, V. Awasthi, A. Kranti, S. Mukherjee, Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact. J. Phys. D Appl. Phys. 49, 445303 (2016)

    CrossRef  Google Scholar 

  3. S. Limpijumnong, S.B. Zhang, S.H. Wei, C.H. Park, Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide. Phys. Rev. Lett. 92, 155504 (2004)

    ADS  CrossRef  Google Scholar 

  4. F.X. Xiu, Z. Yang, L.J. Mandalapu, D.T. Zhao, J.L. Liu, W.P. Beyermann, High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy. Appl. Phys. Lett. 87, 152101 (2005)

    ADS  CrossRef  Google Scholar 

  5. P. Wang, N. Chen, Z. Yin, R. Dai, Y. Bai, p-type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering. Appl. Phys. Lett. 89, 202102 (2006)

    ADS  CrossRef  Google Scholar 

  6. Y.F. Li, B. Yao, Y.M. Lu, Z.P. Wei, Y.Q. Gai, C.J. Zheng, Z.Z. Zhang, B.H. Li, D.Z. Shen, X.W. Fan, Z.K. Tang, Realization of p-type conduction in undoped MgxZn1−xO thin films by controlling Mg content. Appl. Phys. Lett. 91, 232115 (2007)

    ADS  CrossRef  Google Scholar 

  7. K. Vanheusden, C.H. Seager, W.T. Warren, D.R. Tallant, J.A. Voigt, Correlation between photoluminescence and oxygen vacancies in ZnO phosphors. Appl. Phys. Lett. 68, 403 (1996)

    ADS  CrossRef  Google Scholar 

Download references

Acknowledgements

Authors are thankful to DIBS and PL facility, which are part of Sophisticated Instrument Centre (SIC) of IIT Indore. Ritesh Bhardwaj and Md. Arif Khan would like to thank DeitY, Ministry of Electronics and Information Technology, Government of India, for providing fellowship grant under Visvesvaraya PhD Scheme for Electronics and Information Technology. Prof Shaibal Mukherjee is thankful to DeitY, Ministry of Electronics and Information Technology, Government of India for the Young Faculty Research Fellowship (YFRF) under the Visvesvaraya PhD Scheme for Electronics and Information Technology. This work is also partially funded by DST, Government of India.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Shaibal Mukherjee .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and Permissions

Copyright information

© 2019 Springer Nature Switzerland AG

About this paper

Verify currency and authenticity via CrossMark

Cite this paper

Bhardwaj, R., Sharma, P., Khan, M.A., Singh, R., Mukherjee, S. (2019). MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_149

Download citation