Abstract
A photodetector is fabricated based on hybrid heterojunction of reduced graphene and GaN epitaxial film. In addition to UV (350 nm), our device successfully worked in the visible region (600 nm) with high responsivity and fast response and recovery time. Our device shows better performance than the photoconductive devices reported earlier.
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Acknowledgements
The authors would like to thank Director, CSIR-NPL for encouragement. Nisha Prakash would like to thank UGC, Delhi for financial support towards her Ph.D.
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Prakash, N., Kumar, G., Singh, M., Pal, P., Singh, S.P., Khanna, S.P. (2019). Enhanced Photodetection in Visible Region in rGO/GaN Based Hybrid Photodetector. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_1
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DOI: https://doi.org/10.1007/978-3-319-97604-4_1
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