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Band Mixing Effects in InAs/GaAs Quantum Rings and in MoS\(_2\) Quantum Dots Ring-Like Behaving

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Book cover Physics of Quantum Rings

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

The physics of semiconductor quantum rings near the band edge is often well described considering decoupled bands. There are however instances where band coupling leads to relevant changes in the electronic structure and derived properties. In this chapter we analyze two such cases. First, we focus on the heavy hole-light hole band mixing in self-assembled InAs/GaAs quantum rings, which is important for current endeavour to develop quantum information science using the spin of holes. In InAs/GaAs quantum dots, the hole ground state is known to be mainly formed by the heavy hole subband. However, there is a finite spin-orbit coupling with the light-hole subband which is critical in determining the hole spin properties. Based on k\(\cdot \)p theory, in this chapter we study the influence of hole subband mixing in quantum rings. It is shown that the inner cavity of the ring enhances the light hole component of the ground state. As the quasi-1D limit is approached, the light-hole character becomes comparable to that of the heavy hole. Strain reduces the coupling, but it is still larger than in quantum dots. Second, we study the electronic structure of monolayer MoS\(_2\) quantum dots subject to a magnetic field. Here, the coupling between conduction and valence band gives rise to mid-gap topological states which localize near the dot edge. These edge states are analogous to those of 1D quantum rings. We show they present a large, Zeeman-like, linear splitting with the magnetic field, anticross with the delocalized Fock-Darwin-like states of the dot, give rise to Aharonov-Bohm-like oscillations of the conduction (valence) band low-lying states in the K (K\(^{\prime }\)) valley, and modify the strong-field Landau levels limit form of the energy spectrum.

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Notes

  1. 1.

    In graphene systems one can associate an index to each of the inequivalent valleys. Then, the Chern number can be calculated as the sum of these indexes. It is found that while the individual Chern number per inequivalent valley does not vanish, the sum is zero, so that the system is topologically trivial. However, the non-vanishing valley index allows the system to sustain edge states. Such behavior is related to graphene’s marginal topological character. In a similar sense, MoS\(_2\) is marginal as well. The marginality implies that a small perturbation in the Hamiltonian (e.g. mass term) can have a big effect on the presence or absence of the gapless modes.

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Acknowledgements

Support from MINECO project CTQ2017-83781-P and UJI project B2017-59 is acknowledged.

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Authors and Affiliations

  1. Departament de Química Física i Analítica, Universitat Jaume I, 12080, Castelló, Spain

    Carlos Segarra, Josep Planelles & Juan I. Climente

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  1. Carlos Segarra
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  2. Josep Planelles
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  3. Juan I. Climente
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Correspondence to Josep Planelles .

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  1. Institute for Integrative Nanosciences, Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Dresden, Germany

    Vladimir M. Fomin

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Segarra, C., Planelles, J., Climente, J.I. (2018). Band Mixing Effects in InAs/GaAs Quantum Rings and in MoS\(_2\) Quantum Dots Ring-Like Behaving. In: Fomin, V. (eds) Physics of Quantum Rings. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-95159-1_17

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