Abstract
In previous chapters of this book, design considerations and examples of different building blocks (I/Q up-converters, mixers, power amplifiers, power detectors, etc.) of mmW wideband transmitters for multi-Gbps and spectrally efficient communications have been given, as well as different methods to evaluate and compensate for the front-end imperfections in order to maximize the performance of the communication link. In this chapter, design considerations for the mmW transmitter itself will be provided, which consist of a combination of the aforementioned blocks. As in previous chapters, such considerations will be explained using an example: a wideband and high-linearity E-band transmitter [1], which is integrated using a state-of-the-art 55-nm BiCMOS process from STMicroelectronics [2].
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del Rio, D., Rezola, A., Sevillano, J.F., Velez, I., Berenguer, R. (2019). A Fully Integrated and Digitally Assisted BiCMOS Transmitter for a 10-Gbps Wireless Link in the E-Band. In: Digitally Assisted, Fully Integrated, Wideband Transmitters for High-Speed Millimeter-Wave Wireless Communication Links. Analog Circuits and Signal Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-93281-1_9
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