Abstract
This chapter provides a comprehensive review of the state of the art of carbon-based interconnects, presenting the most relevant results in modeling, fabrication, and integration.
Due to their outstanding electrical, thermal, and mechanical properties, carbon-based materials such as carbon nanotubes and graphene nanoribbons have been proposed as candidates for realizing electrical interconnects, to overcome the limits foreseen at nanoscale for conventional materials like copper. Extensive consideration has been so far devoted to this emerging interconnect technology, with a huge effort spent in theoretical and experimental works aimed at demonstrating its feasibility.
Simulation results opened the door to the promise of a real technological breakthrough, characterized by fascinating properties like electrical and thermal ballistic transport, reduced delay, insensitivity to skin effect, mitigation of electromigration, thermal stability, and enhanced reliability and resiliency. These results suggest using carbon materials to fabricate all types of interconnects for future nanoscale VLSI circuits, on-chip signal and power interconnects, through-silicon vias, chip-to-package interconnects, and so on.
In practical applications, these promising results are strictly related to the possibility of realizing high-quality carbon interconnects, with a satisfactory control over parameters like chirality, density, alignment, defects, surface roughness, and contacts. Therefore, major efforts have been made in the last years to assess reliable design approaches and effective fabrication processes. Although technological solutions have been demonstrated to solve issues like the compatibility of the growth temperature with the standard CMOS technology, the needed density and degree of alignment, the presence of defects, and the contact quality, these solutions are still not suitable for a mass production, and so the route to the industrial exploitation of this emerging technology is still long.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Moore GE (1965) Cramming more components onto integrated circuits. Electron Mag:114–117
Dennard R, Gaensslen F, Rideout V, Bassous E, LeBlanc A (1974) Design of ion-implanted MOSFETs with very small dimensions. IEEE J Solid State Circ 9:256–268
International technology roadmap for semiconductors, ITRS 2.0. http://www.itrs2.net/, edition 2015
Hu CK, Harper JME (1998) Copper interconnections and reliability. Mater Chem Phys 52:5–16
Shamiryan D, Abell T, Iacopi F, Maex K (2004) Low-k dielectric materials. Mater Today 7:34–39
Steinhoegl W, Schindler G, Steinlesberger G, Traving M, Engelhardt M (2005) Comprehensive study of the resistivity of copper wires with lateral dimensions of 100nm and smaller. J Appl Phys 97:023706–023701.:7
Beausoleil RG, Kuekes PJ, Snider GS, Shih-Yuan W, Williams RS (2008) Nanoelectronic and nanophotonic interconnect. Proc IEEE 96:230–247
Young B (2000) Digital signal integrity: modeling and simulation with interconnects and packages. Prentice Hall
Swaminathan M, Engin E (2008) Power integrity modeling and design for semiconductors and systems. Prentice Hall, Upper Saddle River
Slepyan GY, Boag A, Mordachev V, Sinkevich E, Maksimenko S, Kuzhir P, Miano G, Portnoi ME, Maffucci A (2015) Nanoscale electromagnetic compatibility: quantum coupling and matching in nanocircuits. IEEE Trans Electromagn Compat 57:1645–1654
Ozbay E (2006) Plasmonics: merging photonics and electronics at nanoscale dimensions. Science 311:189
Sasaki N, Kimoto K, Moriyama W, Kikkawa T (2009) A single-chip ultra-wideband receiver with silicon integrated antennas for inter-chip wireless interconnection. IEEE J Solid State Circ 44:382–393
Avouris P, Chen Z, Perebeinos V (2007) Carbon based electronics. Nat Nanotechnol 2:605
Van Noorden R (2006) Moving towards a graphene world. Nature 442:228–229
Morris JE, Iniewski K (2013) Graphene, carbon nanotubes, and nanostructures: techniques and applications. CRC-Press, Boca Raton
Saito R, Dresselhaus G, Dresselhaus MS (2004) Physical properties of carbon nanotubes. Imperial College Press, Singapore
Castro Neto AH, Guinea F, Peres NMR, Novoselov KS, Geim AK (2009) The electronic properties of graphene. Rev Mod Phys 81:109–162
Rosenblatt S, Yaish Y, Park J, Gore J, Sazonova V, McEuen PL (2002) High performance electrolyte gated carbon nanotube transistors. Nano Lett 2:869–872
Bolotin KI, Sikes KJ, Hone J, Stormer HL, Kim P (2008) Temperature-dependent transport in suspended graphene. Phys Rev Lett 101:096802
Li HJ, Lu WG, Li JJ, Bai XD, Gu CZ (2005) Multichannel ballistic transport in multiwall carbon nanotubes. Phys Rev Lett 95:086601-1-4
Wei BQ, Vajtai R, Ajayan PM (2001) Reliability and current carrying capacity of carbon nanotubes. Appl Phys Lett 79:1172–1174
Murali R, Yang Y, Brenner K, Beck T, Meindl JD (2009) Breakdown current density of graphene nano ribbons. Appl Phys Lett 94:243114
Bellucci S (2005) Carbon nanotubes: physics and applications. Phys Status Solidi C 2:34–47
Pop E, Mann D, Wang Q, Goodson K, Dai H (2005) Thermal conductance of an individual single-wall carbon nanotube above room temperature. Nano Lett 6:96–100
Yap CC, Brun C, Tan D, Li H, Teo EHT, Baillargeat D, Tay BK (2012) Carbon nanotube bumps for the flip chip packaging system. Nanoscale Res Lett 7:105
Close GF, Yasuda S, Paul B, Fujita S, Philip Wong H-S (2009) A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors. Nano Lett 8:706–709
Chen X, Akinwande D, Lee K-J, Close GF, Yasuda S, Paul BC, Fujita S, Kong J, Philip Wong H-S (2010) Fully integrated graphene and carbon nanotube interconnects for gigahertz high-speed CMOS electronics. IEEE Trans Electron Devices 57:3137–3143
Wang T, Chen S, Jiang D, Fu Y, Jeppson K, Ye L, Liu J (2012) Through-silicon vias filled with densified and transferred carbon nanotube forests. IEEE Electron Device Lett 33:420–422
Shulaker MM, Hills G, Patil N, Wei H, Chen H-Y, Philip Wong H-S, Mitra S (2013) Carbon nanotube computer. Nature 501:256–530
Lee K-J, Park H, Kong J, Chandrakasan AP (2013) Demonstration of a subthreshold FPGA using monolithically integrated graphene interconnects. IEEE Trans Electron Devices 60:383–390
Datta S (1995) Electronic transport in mesoscopic systems. Cambridge University Press, Cambridge, UK
Slepyan GY, Maksimenko SA, Lakhtakia A, Yevtushenko O, Gusakov AV (1999) Electrodynamics of carbon nanotubes: dynamics conductivity, impedance boundary conditions, and surface wave propagation. Phys Rev B 60:17136
Ding L, Liang S, Pei T, Zhang Z, Wang S, Zhou W, Liu J, Peng L-M (2012) Carbon nanotube based ultra-low voltage integrated circuits: scaling down to 0.4 V. Appl Phys Lett 100:263116.:1-5
Hanson GW (2011) A common electromagnetic framework for carbon nanotubes and solid nanowires-spatially dispersive conductivity, generalized Ohm’s law, distributed impedance, and transmission line model. IEEE Trans Microw Theory Tech 59:9–20
Maffucci A, Miano G (2015) A general frame for modeling the electrical propagation along graphene nanoribbons, carbon nanotubes and metal nanowires. Comput Model N Technol 19:8–14
Miano G, Villone F (2006) An integral formulation for the electrodynamics of metallic carbon nanotubes based on a fluid model. IEEE Trans Antennas Propag 54(10):2713–2734
Wesström JJ (1996) Signal propagation in electron waveguides: transmission-line analogies. Phys Rev B 54:11484–11491
Burke PJ (2003) An RF circuit model for carbon nanotubes. IEEE Trans Nanotechnol 2:55–58
Salahuddin S, Lundstrom M, Datta S (2005) Transport effects on signal propagation in quantum wires. IEEE Trans Electron Devices 52:1734–1742
Miano G, Forestiere C, Maffucci A, Maksimenko SA, Slepyan GY (2011) Signal propagation in single wall carbon nanotubes of arbitrary chirality. IEEE Trans Nanotechnol 10:135–149
Forestiere C, Maffucci A, Maksimenko SA, Miano G, Slepyan GY (2012) Transmission line model for multiwall carbon nanotubes with intershell tunneling. IEEE Trans Nanotechnol 11:554–564
Maffucci A, Miano G, Villone F (2008) A transmission line model for metallic carbon nanotube interconnects. Inter J Circ Theory Appl 36:31–51
Forestiere C, Maffucci A, Miano G (2010) Hydrodynamic model for the signal propagation along carbon nanotubes. J Nanophotonics 4:041695
Naeemi A, Meindl JD (2006) Compact physical models for multiwall carbon-nanotube interconnects. IEEE Electron Devices Lett 27:338–340
Naeemi A, Meindl JD (2009) Compact physics-based circuit models for graphene nanoribbon interconnects. IEEE Trans Electron Devices 56:1822–1833
Xu C, Li H, Banerjee K (2009) Modeling, analysis, and design of graphene nano-ribbon interconnects. IEEE Trans Electron Devices 56:1567–1578
Li H, Xu C, Srivastava N, Banerjee K (2009) Carbon nanomaterials for next-generation interconnects and passives: physics, status, and prospects. IEEE Trans Electron Devices 56:1799–1821
Wilhite P, Vyas AA, Tan J, Tan J, Yamada T, Wang P, Park J, Yang CY (2014) Metal nanocarbon contacts. Semicond Sci Technol 29:054006
Liao L, Bai J, Lin YC, Qu Y, Huang Y, Duan X (2010) High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics. Adv Mater 22:1941–1945
Valitova I, Amato M, Mahvash F, Cantele G, Maffucci A, Santato C, Martel R, Cicoira F (2013) Carbon nanotube electrodes in organic transistors. Nanoscale 5:4638–4646
Bourlon B, Miko C, Forro L, Glattli DC, Bachtold A (2004) Determination of the intershell conductance in multiwalled carbon nanotubes. Phys Rev Lett 93:176806
Shuba MV, Slepyan GY, Maksimenko SA, Thomsen C, Lakhtakia A (2009) Theory of multiwall carbon nanotubes as waveguides and antennas in the infrared and the visible regimes. Phys Rev B 79:155403
Maffucci A (2015) A new mechanism for THz detection based on the tunneling effect in bi-layer graphene nanoribbons. Appl Sci 5:1102–1116
D’Amore M, Sarto MS (2010) Fast transient analysis of next-generation interconnects based on carbon nanotubes. IEEE Trans Nanotechnol 52:496–503
Cui J-P, Zhao W-S, Yin W-Y, Hu J (2012) Signal transmission analysis of multilayer graphene nano-ribbon (MLGNR) interconnects. IEEE Trans Electromagn Compat 54(1):126–132
Chiariello AG, Maffucci A, Miano G (2013) Circuit models of carbon-based interconnects for nanopackaging. IEEE Trans Compon Packag Manuf Technol 3:1926–1937
Pedram M, Nazarian S (2008) Thermal modeling, analysis, and management in VLSI circuits: principles and methods. Proc IEEE 94:1487–1501
Pop E, Mann DA, Goodson KE, Dai HJ (2007) Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates. J Appl Phys 101:093710
Kim P, Shi L, Majumdar A, McEuen PL (2001) Thermal transport measurements of individual multiwalled nanotubes. Phys Rev Lett 87:215502
Firkowska I, Boden A, Vogt A-M, Reich S (2011) Tailoring the contact thermal resistance at metal–carbon nanotube interface. Phys Status Solidi B 248:2520–2523
Maffucci A, Miano G (2013) Number of conducting channels for armchair and zig-zag graphene nanoribbon interconnects. IEEE Trans Nanotechnol 12:817–823
Shao Q, Liu G, Teweldebrhan D, Balandin AA (2008) High-temperature quenching of electrical resistance in graphene interconnects. Appl Phys Lett 92:202108
Vollebregt S, Banerjee S, Beenakker K, Ishihara R (2013) Size-dependent effects on the temperature coefficient of resistance of carbon nanotube vias. IEEE Trans Electron Dev 60:4085–4089
Huang XMH, Caldwell R, Huang L, Jun SC, Huang M, Sfeir MY, O’Brien SP, Hone J (2005) Controlled placement of individual carbon nanotubes. Nano Lett 5:1515–1518
Zhong GF, Iwasaki T, Kawarada H (2006) Semi-quantitative study on the fabrication of densely packed and vertically aligned single-walled carbon nanotubes. Carbon 44:2009–2014
Schönenberger C, Bachtold A, Strunk C, Salvetat JP, Forr L (1999) Interference and interaction in multiwall carbon nanotubes. Appl Phys A Mater Sci Process 69:283–295
Zhang ZJ, Wei BQ, Ramanath G, Ajayan PM (2000) Substrate-site selective growth of aligned carbon nanotubes. Appl Phys Lett 77(23):3764–3766
Kang SJ, Kocabas C, Ozel T, Shim M, Pimparkar N, Alam MA, Rotkin SV, Rogers JA (2007) High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nat Nanotechnol 2:230–236
Iijima S (1991) Helical microtubules of graphitic carbon. Nature 354:56–58
Journet C, Maser WK, Bernier P, Loiseau A, de la Chapelle ML, Lefrant S, Deniard P, Lee R, Fischer JE (1997) Large-scale production of single-walled carbon nanotubes by the electric-arc technique. Nature 388:756–758
Zhang Q, Huang JQ, Zhao MQ, Qian WZ, Wei F (2011) Carbon nanotube mass production: principles and processes. Chem Sustain Chem 4(7):864–889
Cantoro M, Hofmann S, Pisana S, Scardaci V, Parvez A, Ducati C, Ferrari AC, Blackburn AM, Wang KY, Robertson J (2006) Catalytic chemical vapor deposition of single-wall carbon nanotubes at low temperatures. Nano Lett 6:1107–1112
Terranova ML, Sessa V, Rossi M (2006) The world of carbon nanotubes: an overview of CVD growth methodologies. J Chem Vap Depos 12:315–325
Kumar M (2011) Carbon nanotube synthesis and growth mechanism. In: Yellampalli S (ed) Carbon nanotubes-synthesis, characterization, applications. IN-TECH, Croatia. isbn: 978-953-307-497-9, Available from: http://www.intechopen.com/books/carbon-nanotubes-synthesis-characterization-applications/carbonnanotube-synthesis-and-growth-mechanism
Esconjauregui S, Fouquet M, Bayer BC, Ducati C, Smajda R, Hofmann S, Robertson J (2010) Growth of ultrahigh density vertically aligned carbon nanotube forests for interconnects. ACS Nano 4:7431–7436
Yang J, Esconjauregui S, Robertson AW, Guo Y, Hallam T, Sugime H, Zhong G, Duesberg GS, Robertson J (2015) Growth of high-density carbon nanotube forests on conductive TiSiN supports. Appl Phys Lett 106:083108
Na N, Kim DY, So YG, Ikuhara Y, Noda S (2015) Simple and engineered process yielding carbon nanotube arrays with 1.2e1013 cm−2 wall density on conductive underlayer at 400°C. Carbon 81:773–781
Yokoyama D, Iwasaki T, Yoshida T, Kawarada H, Sato S, Hyakushima T, Nihei M, Awano Y (2007) Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing. Appl Phys Lett 91:263101-1-3
Chiodarelli N, Li Y, Cott DJ, Mertens S, Peys N, Heyns M, De Gendt S, Groeseneken G, Vereecken PM (2011) Integration and electrical characterization of carbon nanotube via interconnects. Microelectron Eng 88:837–843
Vollebregt S, Tichelaar FD, Schellevis H, Beenakker CIM, Ishihara R (2014) Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 °C. Carbon 71:249–256
Hofmann S, Ducati C, Robertson J (2003) Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition. Appl Phys Lett 83:135
Hata K, Futaba DN, Mizuno K, Namai T, Yumura M, Iijima S (2004) Water-assisted highly efficient synthesis of impurity-free single-walled carbon nanotubes. Science 306:1362
Meyyappan M, Delzeit L, Cassell A, Hash D (2003) Carbon nanotube growth by PECVD: a review. Plasma Sources Sci Technol 12:205–216
Maffucci A, Micciulla F, Cataldo A, Miano G, Bellucci S (2017) Modeling, fabrication, and characterization of large carbon nanotube interconnects with negative temperature coefficient of the resistance. IEEE Trans Compon Packag Manuf 7:485–493
Liu TL, Wu HW, Wang CY, Chen SY, Hung MH, Yew TR (2013) A method to form self-aligned carbon nanotube vias using a Ta-cap layer on a Co-catalyst. Carbon 56:366–373
Xin H, Woolley AT (2004) Directional orientation of carbon nanotubes on surfaces using a gas flow cell. Nano Lett 4:1481–1484
Chai Y, Hazeghi A, Takei K, Chen H-Y, Chan PCH, Javey A, Philip Wong H-S (2012) Low-resistance electrical contact to carbon nanotubes with graphitic interfacial layer. IEEE Trans Electron Devices 59:12–19
Fiedler H, Toader M, Hermann S, Rennau M, Rodriguez RD, Sheremet E, Hietschold M, Zahn DRT, Schulz SE, Gessner T (2015) Back-end-of-line compatible contact materials for carbon nanotube based interconnects. Microelectron Eng 137:130–134
Chiodarelli N, Fournier A, Okuno H, Dijon J (2013) Carbon nanotubes horizontal interconnects with end-bonded contacts, diameters down to 50 nm and lengths up to 20 μm. Carbon 60:139–145
Chiodarelli N, Fournier A, Dijon J (2013) Impact of the contact’s geometry on the line resistivity of carbon nanotubes bundles for applications as horizontal interconnects. Appl Phys Lett 103:053115-1-4
Xu W, Lee T-W (2016) Recent progress in fabrication techniques of graphene nanoribbons. Mater Horiz 3:186–207
Campos-Delgado J, Kim YA, Hayashi T, Morelos-Gómez A, Hofmann M, Muramatsu H, Endo M, Terrones H, Shull RD, Dresselhaus MS, Terrones M (2009) Thermal stability studies of CVD-grown graphene nanoribbons: defect annealing and loop formation. Chem Phys Lett 469:177–182
Kim KS, Zhao Y, Jang H, Lee SY, Kim JM, Kim KS, Ahn JH, Kim P, Choi JY, Hong BH (2009) Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 457:706–710
Wang X, Dai H (2010) Etching and narrowing of graphene from the edges. Nat Chem 2:661–664
Novoselov KS, Geim AK, Morozov S, Jiang D, Zhang Y, Dubonos S (2004) Electric field effect in atomically thin carbon films. Science 306:666–669
Kimouche A, Ervasti MM, Drost R, Halonen S, Harju A, Joensuu PM, Sainio J, Liljeroth P (2015) Ultra-narrow metallic armchair graphene nanoribbons. Nat Commun 6:10177
Kosynkin DV, Higginbotham AL, Sinitskii A, Lomeda JR, Dimiev A, Price BK, Tour JM (2009) Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons. Nature 458:872–876
Rakheja S, Kumar V, Naeemi A (2013) Evaluation of the potential performance of graphene nanoribbons as on-chip interconnects. Proc IEEE 101:1740–1765
Tan X, Chuang H-J, Lin M-W, Zhou Z, Cheng MM-C (2013) Edge effects on the pH response of graphene nanoribbon field effect transistors. J Phys Chem C 117:27155–27160
Babichev AV, Gasumyants VE, Egorov AY, Vitusevich S, Tchernycheva M (2014) Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications. Nanotechnology 25:335707
Wang X, Dai H (2010) Etching and narrowing of graphene from the edges. Nat Chem 2:661–665
Hicks J, Tejeda A, Taleb-Ibrahimi A, Nevius M, Wang F, Shepperd K, Palmer J, Bertran F, Le Fevre P, Kunc J, de Heer WA, Conrad EH (2013) A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene. Nat Phys 9:49–54
Sprinkle M, Ruan M, Hu Y, Hankinson J, Rubio-Roy M, Zhang B, Wu X, Berger C, de Heer WA (2010) Scalable templated growth of graphene nanoribbons on SiC. Nat Nanotechnol 5:727–731
Maffucci A, Micciulla F, Cataldo A, Miano G, Bellucci S (2016) Bottom-up realization and electrical characterization of a graphene-based device. Nanotechnology 27:095204-1-9
Zhao W-S, Yin W-Y (2014) Comparative study on multilayer graphene nanoribbon (MLGNR) interconnects. IEEE Trans Electromagn Compat 56:638–645
Jiang J, Kang J, Cao W, Xie X, Zhang H, Chu JH, Liu W, Banerjee K (2017) Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects. Nano Lett 17:1482–1488
Bao W, Wan J, Han X, Cai X, Zhu H, Kim D, Ma D, Xu Y, Munday JN, Dennis Drew H, Fuhrer MS, Hu L (2014) Approaching the limits of transparency and conductivity in graphitic materials through lithium intercalation. Nat Commun 5:4224
Todri-Sanial A, Dijon J, Maffucci A (2016) Carbon nanotubes for interconnects: process, design and applications. Springer, The Netherlands
Naeemi A, Meindl JD (2008) Design and performance modeling for single-walled carbon nanotubes as local, semiglobal, and global interconnects in gigascale integrated systems. IEEE Trans Electron Devices 54:26–37
Raychowdhury A, Roy K (2006) Modelling of metallic carbon-nanotube interconnects for circuit simulations and a comparison with Cu interconnects for scaled technologies. IEEE Trans Comp Aided Des Integr Circ Syst 25:58–65
Maffucci A, Miano G, Villone F (2008) Performance comparison between metallic carbon nanotube and copper nano-interconnects. IEEE Trans Adv Packag 31:692–699
Hoenlein W, Kreupl F, Duesberg GS, Graham AP, Liebau M, Seidel RV, Unger E (2004) Carbon nanotube applications in microelectronics. IEEE Trans Compon Packag Technol 27:629–634
Li H, Srivastava N, Mao J-F, Yin W-Y, Banerjee K (2011) Carbon nanotube vias: does ballistic electron–phonon transport imply improved performance and reliability? IEEE Trans Electron Devices 58:2689–2701
Wang T, Jeppson K, Ye L, Liu J (2011) Carbon-nanotube through-silicon via interconnects for three-dimensional integration. Small 7:2313–2317
Todri A, Kundu S, Girard P, Bosio A, Dilillo L, Virazel A (2013) A study of tapered 3-D TSVs for power and thermal integrity. IEEE Trans VLSI Syst 21:306–319
Xie R et al (2013) Carbon nanotube growth for through silicon via application. Nanotechnology 24:125603
Magnani A, de Magistris M, Todri-Sanial A, Maffucci A (2016) Electrothermal analysis of carbon nanotubes power delivery networks for nanoscale integrated circuits. IEEE Trans Nanotechnol 15:380–388
Li H, Liu W, Cassell AM, Kreupl F, Banerjee K (2013) Low-resistivity long-length horizontal carbon nanotube bundles for interconnect applications-part II: characterization. IEEE Trans Electron Devices 60:2870–2876
Vollebregt S, Ishihara R (2016) The direct growth of carbon nanotubes as vertical interconnects in 3D integrated circuits. Carbon 96:332–338
Yokoyama D, Iwasaki T, Ishimaru K, Sato S, Hyakushima T, Nihei M, Awano Y, Kawarada H (2008) Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects. Jpn J Appl Phys 47:1985–1990
Dijon J, Ramos R, Fournier A, Le Poche H, Fournier H, Okuno H, Simonato JP (2014) Record resistivity of in-situ grown horizontal carbon nanotube interconnect, vol 3. Proceedings of the 2014 NSTI nanotechnology conference and expo, NTSI-nanotech 2014. pp 17–20
Close GF, Philip Wong H-S (2008) Assembly and electrical characterization of multiwall carbon nanotube interconnects. IEEE Trans Nanotechnol 7:596–600
Knickerbocker JU et al (2008) Three-dimensional silicon integration. IBM J Res Dev 52:553–569
Katti G, Stucchi M, De Meyer K, Dehaene W (2010) Electrical modeling and characterization of through silicon via for three-dimensional ICs. IEEE Trans Electron Devices 57:256–262
Wang T, Tung F, Foo L, Dutta V (2001) Studies on a novel flip-chip interconnect structure. Pillar bump. In: Proceedings of ECTC, electronic components and technology conference
Subramaniam C, Yamada T, Kobashi K, Sekiguchi A, Futaba DN, Yumura M, Hata K (2013) One hundred fold increase in current carrying capacity in a carbon nanotube–copper composite. Nat Commun 4:2202–2208
Xu C, Li H, Suaya R, Banerjee K (2010) Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs. IEEE Trans Electron Devices 57:3405–3417
Kim J et al (2011) High-frequency scalable electrical model and analysis of a through silicon via (TSV). IEEE Trans Compon Pack Manuf Techn 1:181–195
Chiariello AG, Maffucci A, Miano G (2012) Electrical modeling of carbon nanotube vias. IEEE Trans Electromagn Compat 54:158–166
Zhao W-S, Zheng J, Hu Y, Sun S, Wang G, Dong L, Yu L, Sun L, Yin W-Y (2016) High frequency analysis of cu-carbon nanotube composite through-silicon vias. IEEE Trans Nanotechnol 15:506–511
Das D, Rahaman H (2011) Analysis of crosstalk in single- and multiwall carbon nanotube interconnects and its impact on gate oxide reliability. IEEE Trans Nanotechnol 10:1362–1370
Steinhogl W, Schindler G, Steinlesberger G, Traving M, Engelhardt M (2005) Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller. J Appl Phys 97:023706./1-7
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2018 Springer International Publishing AG, part of Springer Nature
About this chapter
Cite this chapter
Maffucci, A. (2018). Carbon Interconnects. In: Morris, J. (eds) Nanopackaging. Springer, Cham. https://doi.org/10.1007/978-3-319-90362-0_23
Download citation
DOI: https://doi.org/10.1007/978-3-319-90362-0_23
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-90361-3
Online ISBN: 978-3-319-90362-0
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)