Abstract
In this work, we propose to develop a method based on the single diode model circuit, which able to extract the five electric parameters: the photocurrent Iph, the saturation current Is, the ideality factor n, the series and shunt resistance (Rs and Rsh) of the solar cell based on silicon as an absorber and ZnO:Al as a transparent conductive oxide. In this context, an approach based on the genetic algorithms (GAs) was developed in order to model and optimize the simulated data. Optimal values of Iph, Is, n and Rs, Rsh between the experimental and calculated values were estimated by minimizing the quadratic error (6.7 × 10−5).
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Kerour, S., Lasladj, M., Bouloufa, A. (2018). Solar Cell Based on p-Si/n-Zno:Al Thin Films: Simulation and Parameters Extraction. In: Abdelbaki, B., Safi, B., Saidi, M. (eds) Proceedings of the Third International Symposium on Materials and Sustainable Development. SMSD 2017. Springer, Cham. https://doi.org/10.1007/978-3-319-89707-3_22
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DOI: https://doi.org/10.1007/978-3-319-89707-3_22
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