Polarity Inversion and Electron Carrier Generation in III-Nitride Compounds

  • Takashi NakayamaEmail author
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 269)


In this chapter, we consider two topics based on theoretical calculations; the surface polarity inversion during the film growth and the electron-carrier generation by structural defects in III-nitride compounds. Some of unique features of III-nitride compounds originate from their wurtzite crystal structure.


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© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of PhysicsChiba UniversityChibaJapan

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