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Thermodynamic Approach to InN Epitaxy

  • Yoshihiro Kangawa
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 269)

Abstract

In this chapter, influences of N/III ratio, growth orientation and total pressure on epitaxial growth processes of In(Ga)N are discussed. It is known that N/III ratio is essential parameter to grow In(Ga)N thin films.

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Copyright information

© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Research Institutes for Applied MechanicsKyushu UniversityFukuokaJapan

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