Thermodynamic Approach to InN Epitaxy

  • Yoshihiro KangawaEmail author
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 269)


In this chapter, influences of N/III ratio, growth orientation and total pressure on epitaxial growth processes of In(Ga)N are discussed. It is known that N/III ratio is essential parameter to grow In(Ga)N thin films.


  1. 1.
    T. Matsuoka, N. Yoshimoto, T. Sasaki, A. Katsui, Wide-gap semiconductor InGaN and InGaAlN grown by MOVPE. J. Electr. Mater. 21, 157 (1992)CrossRefGoogle Scholar
  2. 2.
    T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, E. Kurimoto, Optical bandgap energy of wurtzite InN. Appl. Phys. Lett. 81, 1246 (2002)CrossRefGoogle Scholar
  3. 3.
    T. Matsuoka, H. Tanaka, T. Sasaki, A. Katsui, Wode-gap semiconductor (In, Ga)N. Inst. Phys. Conf. Set. 106, 141 (1989)Google Scholar
  4. 4.
    T. Matsuoka, Current status of GaN and related compounds as wide-gap semiconductors. J. Cryst. Growth 124, 433 (1992)CrossRefGoogle Scholar
  5. 5.
    S. Keller, N.A. Fichtenbaum, M. Furukawa, J.S. Speck, S.P. DenBaars, U.K. Mishra, Growth and characterization of N-polar InGaN/GaN multiquantum wells. Appl. Phys. Lett. 90, 191908 (2007)CrossRefGoogle Scholar
  6. 6.
    H. Yamada, K. Iso, M. Saito, H. Hirayama, N. Fellows, H. Masui, K. Fujito, J.S. Speck, S.P. DenBaars, S. Nakamura, Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates. Phys. Status Solidi 2, 89 (2008)Google Scholar
  7. 7.
    S.F. Chichibu, M. Kagaya, P. Corfdir, J.-D. Ganière, B. Deveaud-Pl èdran, N. Grandjean, S. Kubo, K. Fujito, Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth. Semicond. Sci. Technol. 27, 024008 (2012)CrossRefGoogle Scholar
  8. 8.
    T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G.J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, A.D. Dräger, A. Hangleiter, F. Scholz, Three-dimensional GaN for semipolarlight emitters. Phys. Status Solidi B 248, 549 (2011)CrossRefGoogle Scholar
  9. 9.
    T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, M. Kneissl, Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells. Semicond. Sci. Technol. 27, 024014 (2012)CrossRefGoogle Scholar
  10. 10.
    H. Jӧnen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A.D. Drӓger, S. Metzner, F. Bertram, J. Christen, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, A. Hangleiter, Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces. Phys. Status Solidi B 248, 600 (2011)CrossRefGoogle Scholar
  11. 11.
    T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, N. Yamada, Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect. Appl. Phys. Lett. 73, 1691 (1998)CrossRefGoogle Scholar
  12. 12.
    T. Matsuoka, Y. Liu, T. Kimura, Y. Zhang, K. Prasertsuk, R. Katayama, Paving the way to high-quality indium nitride: the effects of pressurized reactor. Proc. SPIE 7945, 794519 (2011)CrossRefGoogle Scholar
  13. 13.
    T. Kimura, K. Prasertsuk, Y. Zhang, Y. Liu, T. Hanada, R. Katayama, T. Matsuoka, Phase diagram on phase purity of InN grown pressurized-reactor MOVPE. Phys. Status Solidi C 9, 654 (2012)CrossRefGoogle Scholar
  14. 14.
    T. Iwabuchi, Y. Liu, T. Kimura, Y. Zhang, K. Prasertsuk, H. Watanabe, N. Usami, R. Katayama, T. Matsuoka, Effect of phase purity on dislocation density of pressurized-reactor metalorganic vapor phase epitaxy grown InN. Jpn. J. Appl. Phys. 51, 04DH02 (2012)CrossRefGoogle Scholar
  15. 15.
    A. Koukitu, N. Takahashi, H. Seki, Thermodynamic study on metalorganic vapor-phase epitaxial growth of group III nitrides. Jpn. J. Appl. Phys. 36, L1136 (1997)CrossRefGoogle Scholar
  16. 16.
    A. Koukitu, H. Seki, Thermodynamic analysis on molecular beam epitaxy of GaN, InN and AlN. Jpn. J. Appl. Phys. 36, L750 (1997)CrossRefGoogle Scholar
  17. 17.
    A. Koukitu, S. Hama, T. Taki, H. Seki, Thermodynamic analysis of hydride vapor phase epitaxy of GaN. Jpn. J. Appl. Phys. 37, 762 (1998)CrossRefGoogle Scholar
  18. 18.
    K. Hanaoka, H. Murakami, Y. Kumagai, A. Koukitu, Thermodynamic analysis on HVPE growth of InGaN ternary alloy. J. Cryst. Growth 318, 441 (2011)CrossRefGoogle Scholar
  19. 19.
    Y. Kumagai, K. Takemoto, T. Hasegawa, A. Koukitu, H. Seki, Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3. J. Cryst. Growth 231, 57 (2001)CrossRefGoogle Scholar
  20. 20.
    A. Koukitu, N. Takahashi, T. Taki, H. Seki, Thermodynamic analysis of the MOVPE growth of InxGa1-xN. J. Cryst. Growth 170, 306 (1997)CrossRefGoogle Scholar
  21. 21.
    T. Yayama, Y. Kangawa, K. Kakimoto, A. Koukitu, Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films. Phys. Status Solidi C 7, 2249 (2010)CrossRefGoogle Scholar
  22. 22.
    K. Shiraishi, A new model approach for electronic structure calculation of polar semiconductor surface. J. Phys. Soc. Jpn. 59, 3455 (1990)CrossRefGoogle Scholar
  23. 23.
    S.B. Zhang, Su-Huai Wei, Surface energy and the common dangling bond rule for semiconductors. Phys. Rev. Lett. 92, 086102 (2004)CrossRefGoogle Scholar
  24. 24.
    C.E. Dreyer, A. Janotti, C.G. Van de Walle, Absolute surface energies of polar and nonpolar planes of GaN. Phys. Rev. B 89, 081305 (2014)CrossRefGoogle Scholar
  25. 25.
    Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces. Surf. Sci. 493, 178 (2001)CrossRefGoogle Scholar
  26. 26.
    T. Ito, T. Akiyama, K. Nakamura, An ab initio-based approach to the stability of GaN(0001) surfaces under Ga-rich conditions. J. Cryst. Growth 311, 3093 (2009)CrossRefGoogle Scholar
  27. 27.
    Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama, Surface stability and growth kinetics of compound semiconductors: an ab initio-based approach. Materials 6, 3309 (2013)CrossRefGoogle Scholar
  28. 28.
    A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu, Advances in modeling semiconductor epitaxy: contribution of growth orientation and surface reconstruction to InN MOVPE. Appl. Phys. Express 9, 125601 (2016)CrossRefGoogle Scholar

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© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Research Institutes for Applied MechanicsKyushu UniversityFukuokaJapan

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