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Novel Behaviors Related to III-Nitride Thin Film Growth

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Epitaxial Growth of III-Nitride Compounds

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 269))

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Abstract

In Chaps. 4 and 7, we have discussed an ab initio-based chemical potential approach that incorporates the free energy of gas phase, to determine surface structures and growth kinetics on III-nitride surfaces.

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Authors and Affiliations

  1. Department of Physics Engineering, Mie University, Tsu, Japan

    Toru Akiyama

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  1. Toru Akiyama
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Correspondence to Toru Akiyama .

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  1. Institute for Materials Research, Tohoku University, Sendai, Japan

    Takashi Matsuoka

  2. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka, Japan

    Yoshihiro Kangawa

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Akiyama, T. (2018). Novel Behaviors Related to III-Nitride Thin Film Growth. In: Matsuoka, T., Kangawa, Y. (eds) Epitaxial Growth of III-Nitride Compounds. Springer Series in Materials Science, vol 269. Springer, Cham. https://doi.org/10.1007/978-3-319-76641-6_10

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