• Tomonori ItoEmail author
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 269)


Since the successful fabrication of high-quality epitaxial GaN in 1990s, which leads to the development of blue light-emitting diodes and laser diodes, a new frontier in optoelectronics have been opened up.


  1. 1.
    H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Appl. Phys. Lett. 48, 353 (1986)CrossRefGoogle Scholar
  2. 2.
    I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki, Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≤ 0.4) films grown on sapphire substrate by MOVPE. J. Cryst. Growth 98, 209 (1989)CrossRefGoogle Scholar
  3. 3.
    S. Nakamura, GaN Growth using GaN buffer layer. Jpn. J. Appl. Phys. 30, L1705 (1991)CrossRefGoogle Scholar
  4. 4.
    H. Amano, M. Kito, K. Hiramatsu, N. Sawaki, I. Akasaki, P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn. J. Appl. Phys. 28, L2112 (1989)CrossRefGoogle Scholar
  5. 5.
    S. Nakamura, T. Mukai, M. Senoh, Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett. 64, 1687 (1994)CrossRefGoogle Scholar
  6. 6.
    S.F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, T. Onuma, K. Oakamoto, H. Ohata, Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 93, 151908 (2008)CrossRefGoogle Scholar
  7. 7.
    D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, U. Strauß, 500 nm electrically driven InGaN based laser diodes. Appl. Phys. Lett. 94, 081119 (2009)CrossRefGoogle Scholar
  8. 8.
    Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, 531 nm green lasing of InGaN based laser diodes on semi-polar 2021 free-standing GaN substrates. Appl. Phys. Express 2, 082101 (2009)CrossRefGoogle Scholar
  9. 9.
    T. Nishida, N. Kobayashi, 346 nm emission from AlGaN multi-quantum-well light emitting diode. Phys. Status Solidi A 176, 45 (1999)CrossRefGoogle Scholar
  10. 10.
    V. Adivarahan, W.H. Sun, A. Chitnis, M. Shatalov, S. Wu, H.P. Maruska, M.A. Khan, 250 nm AlGaN light-emitting diodes. Appl. Phys. Lett. 85, 2175 (2004)CrossRefGoogle Scholar
  11. 11.
    M.A. Khan, M. Shatalov, H.P. Maruska, H.M. Wang, E. Kuokstis, III–nitride UV devices. Jpn. J. Appl. Phys. 44, 7191 (2005)CrossRefGoogle Scholar
  12. 12.
    Y. Taniyasu, M. Kasu, T. Makimoto, An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature (London) 441, 325 (2006)CrossRefGoogle Scholar
  13. 13.
    E. Kaxiras, Y. Bar-Yam, J.D. Joannopoulos, K.C. Pandey, Ab initio theory of polar semiconductor surfaces. II. (2 × 2) reconstructions and related phase transitions of GaAs \(\left( {\overline{111} } \right)\). Phys. Rev. B 35, 9625 (1987)Google Scholar
  14. 14.
    G.X. Qian, R.M. Martin, D.J. Chadi, Stoichiometry and surface reconstruction: An ab initio study of GaAs(100) surfaces. Phys. Rev. Lett. 60, 1962 (1988)CrossRefGoogle Scholar
  15. 15.
    J.E. Northrup, Structure of Si(100)H: dependence on the H chemical potential. Phys. Rev. B 44, 14149 (1991)Google Scholar
  16. 16.
    A.R. Smith, R.M. Feenstra, D.W. Greve, J. Neugebauer, J.E. Northrup, “Reconstructions of the GaN(0001) surface. Phys. Rev. Lett. 79, 3934 (1997)CrossRefGoogle Scholar
  17. 17.
    T. Ito, K. Shiraishi, A Monte Carlo simulation study for adatom migration and resultant atomic arrangements in AlxGa1-xAs on a GaAs(001) surface. Appl. Surf. Sci. 82–83, 208 (1994)CrossRefGoogle Scholar
  18. 18.
    T. Ito, K. Shiraishi, A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE. Surf. Sci. 357–358, 486 (1996)CrossRefGoogle Scholar

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© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Physics EngineeringMie UniversityTsuJapan

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