Non-perturbative Approaches in Nanoscience and Corrections to Finite-Size Scaling
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Non-perturbative approaches in nanoscience are discussed. Traditional applications of these approaches cover description of charge transport and optical phenomena in nano-scale systems. We focus on finite-size effects in spin systems near the critical point, based on Monte Carlo (MC) method and some analytical arguments. We have performed MC simulations of the 3D Ising model for small, as well as large linear lattice sizes up to \(L=2560\), providing a numerical evidence for a recent challenging prediction, according to which the asymptotic decay of corrections to finite-size scaling is remarkably slower than it was expected before. Our approach along with several other non-perturbative approaches, like, e.g., the non-perturbative nonequilibrium Greens functions (NEGF) method, reveals a potential application of non-perturbative methods to nanoscience and nanotechnology through condensed matter physics, including semiconductor physics and physics of disordered systems like spin glasses.
KeywordsIsing model Non-perturbative methods Finite-size effects Corrections to scaling Critical exponents Monte Carlo simulation
This work was made possible by the facilities of the Shared Hierarchical Academic Research Computing Network (SHARCNET: www.sharcnet.ca). The authors acknowledge the use of resources provided by the Latvian Grid Infrastructure and High Performance Computing centre of Riga Technical University. R. M. acknowledges the support from the NSERC and CRC program.
- 2.C. Riddet, A. Asenov, Proceedings Simulation of Semiconductor Processes and Devices (2008), pp. 261–264Google Scholar
- 6.H.L. Calve, P.M. Perez-Piskunov, H.M. Pastawski, S. Roche, L.E.F.F. Torres, J. Phys. Condens. Matter 25, 144202 (2013)Google Scholar
- 11.S.K. Ma, Modern Theory of Critical Phenomena (W. A. Benjamin Inc, New York, 1976)Google Scholar
- 14.J. Kaupužs, Canadian. J. Phys. 9, 373 (2012)Google Scholar
- 16.J. Kaupužs, J. Rimšāns, R.V.N. Melnik, Ukr. J. Phys. 56, 845 (2011)Google Scholar