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The Self-directed Channel Memristor: Operational Dependence on the Metal-Chalcogenide Layer

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Handbook of Memristor Networks

Abstract

The basic self-directed channel memristor is comprised of five layers of Ge2Se3, SnSe, and an oxidizable metal, Ag. Each layer plays a role in the operation of the memristor, influencing both the electrical and thermal properties of the device. Device operation can be altered by manipulation of these layers through material changes, layer ordering, or layer exclusion. In this chapter the function of the SnSe layer is explored through electrical characterization of several device types in which this metal chalcogenide layer has been altered, either by changing the metal, or replacing Se with Te.

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Notes

  1. 1.

    Courtesy of Micron Technology, Inc.

  2. 2.

    LTSpice is a free high performance SPICE simulator available from linear technology.

  3. 3.

    When first fabricated, some devices in Sample 1 displayed irregular and variable pinched hysteresis on the first and second voltage sweeps. However, the response changed to the NDR shown in Fig. 5 when: (1) measured repeatedly (>50 times) right after fabrication; (2) heated to modest temperatures for an hour (>65 °C); and (3) sufficient time has passed after fabrication.

  4. 4.

    After initial fabrication, Sample 10 exhibited high threshold voltages, in the range of 2–3 V. Over a four-year period since the sample was first fabricated, the first write threshold voltage has dropped below 1 V, as shown in Fig. 6.

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Acknowledgements

The author would like to thank Micron Technology for assistance with device fabrication and STEM imaging and Prof. Rene Rodriguez for insightful discussions. Several students have contributed to the work included here: Beth Cook (DC data collection at temperature), Denver Lloyd (CW simulations), Sean Brasfield (room temperature DC and CW data collection), Randall Bassine (device fabrication) and Jeremy Astle (device fabrication). Parts of this work were partially supported by a grant from the National Science Foundation, grant no. CCF-1320987, the United States Air Force Office of Scientific Research, DEPSCoR Grant No. FA9550-07-1-0546, and by the United States Air Force Research Laboratory, Grant No. FA9453-08-2-0252.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Boise State University, 1910 University Drive, Boise, ID, 83725, USA

    Kristy A. Campbell

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  1. Kristy A. Campbell
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Correspondence to Kristy A. Campbell .

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Editors and Affiliations

  1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA

    Leon Chua

  2. Democritus University of Thrace, Xanthi, Greece

    Georgios Ch. Sirakoulis

  3. Department of Computer Science and Creative Technologies, University of the West of England, Bristol, UK

    Andrew Adamatzky

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Campbell, K.A. (2019). The Self-directed Channel Memristor: Operational Dependence on the Metal-Chalcogenide Layer. In: Chua, L., Sirakoulis, G., Adamatzky, A. (eds) Handbook of Memristor Networks. Springer, Cham. https://doi.org/10.1007/978-3-319-76375-0_29

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  • DOI: https://doi.org/10.1007/978-3-319-76375-0_29

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