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The Self-directed Channel Memristor: Operational Dependence on the Metal-Chalcogenide Layer

  • Kristy A. CampbellEmail author
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Abstract

The basic self-directed channel memristor is comprised of five layers of Ge2Se3, SnSe, and an oxidizable metal, Ag. Each layer plays a role in the operation of the memristor, influencing both the electrical and thermal properties of the device. Device operation can be altered by manipulation of these layers through material changes, layer ordering, or layer exclusion. In this chapter the function of the SnSe layer is explored through electrical characterization of several device types in which this metal chalcogenide layer has been altered, either by changing the metal, or replacing Se with Te.

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Notes

Acknowledgements

The author would like to thank Micron Technology for assistance with device fabrication and STEM imaging and Prof. Rene Rodriguez for insightful discussions. Several students have contributed to the work included here: Beth Cook (DC data collection at temperature), Denver Lloyd (CW simulations), Sean Brasfield (room temperature DC and CW data collection), Randall Bassine (device fabrication) and Jeremy Astle (device fabrication). Parts of this work were partially supported by a grant from the National Science Foundation, grant no. CCF-1320987, the United States Air Force Office of Scientific Research, DEPSCoR Grant No. FA9550-07-1-0546, and by the United States Air Force Research Laboratory, Grant No. FA9453-08-2-0252.

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Authors and Affiliations

  1. 1.Department of Electrical and Computer EngineeringBoise State UniversityBoiseUSA

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