Abstract
Two-dimensional (2D ) materials beyond graphene are undergoing intense study owing to their remarkable electronic and optical properties. This chapter is mainly devoted to Raman scattering measurements of 2D transition metal dichalcogenides (TMD). The similarities and differences in terms of phonon structure of monolayer and bulk MX\(_\text {2}\) are discussed. Layer-dependent Raman characteristics of monolayer and few-layer MoS\(_\text {2}\) could be obtained with both high and low frequency detection. The effect of uniaxial strain on the Raman spectrum of monolayer MoS\(_\text {2}\) is demonstrated. The stacking order and interlayer van der Waals (vdWs) interaction in few-layer TMD materials could be identified by low frequency (LF) Raman spectrum and imaging (\(\sim \)10 rel. cm\(^{-1}\)).
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Acknowledgements
The author wants to thank Dr. Yan Jiaxu, Prof. Cong Chunxiao, Dr. Wang Yanlong Dr. Shang Jinzhi and Xia Juan for their assistance with the schematic diagrams and experimental data. The MoS\(_\text {2}\) sample for LF Raman mapping was provided by Dr. Sun Linfeng.
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Hu, H., Shen, Z.X., Yu, T. (2018). Low Frequency Raman Scattering of Two-Dimensional Materials Beyond Graphene. In: Toporski, J., Dieing, T., Hollricher, O. (eds) Confocal Raman Microscopy. Springer Series in Surface Sciences, vol 66. Springer, Cham. https://doi.org/10.1007/978-3-319-75380-5_9
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