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Parasitic Bipolar Transistors in Benchmark Structures

  • Pietro Buccella
  • Camillo Stefanucci
  • Maher Kayal
  • Jean-Michel Sallese
Chapter
Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

This chapter discusses the validation of the EPFL substrate model against experimental data of parasitic couplings measured from specific test circuits fabricated in a HV-CMOS technology. The substrate model is based on a distributed network composed of three lumped components whose parameters must be calibrated. Therefore, a specific technology calibration methodology is developed and uses the electrical characteristics of simple structures such as diodes and bipolar transistors. Parasitic simulations are compared with measurements of substrate couplings in simple test structures, in a high-voltage H-Bridge, and in a rotor coil driver used in automotive alternators. The results are also discussed in terms of computational resources needed for the extraction and simulation of the substrate model.

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Copyright information

© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  • Pietro Buccella
    • 1
  • Camillo Stefanucci
    • 1
  • Maher Kayal
    • 1
  • Jean-Michel Sallese
    • 2
  1. 1.STI IEL GR-KAÉcole Polytechnique Fédérale de LausanneLausanneSwitzerland
  2. 2.STI IEL EDALBÉcole Polytechnique Fédérale de LausanneLausanneSwitzerland

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