Abstract
In the previous chapter, the fundamentals of TFTs were discussed with emphasis on device operation and working principles. The current chapter is related to the integration of these devices. First, different setups of TFTs are presented, highlighting the advantages and disadvantages of each structure. Secondly, the description of the integration process is divided considering each integration step or layer for the achievement of a complete transistor or device. Particular focus is given to material properties and characteristics as well as to integration techniques used in this work; nevertheless, a brief discussion concerning other methods and materials is also exposed.
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Notes
- 1.
In this study, deionized water using reverse osmosis with minimum resistivity of 18 M Ω was used in all steps, and from now on the term water refers to deionized water. If for a particular reason another water type (e.g., distilled or non-purified) is used, the term water is clarified.
- 2.
Polyimide (PI) is commercially known as Kapton®;.
- 3.
Standard 100 mm Si wafer with more than 300 nm thermally grown oxide.
- 4.
Borosilicate glass wafers with 100 mm cross section and 0.5 mm thickness from Plan Optic AG.
- 5.
The development of the fixing system and the adaptation of the photolithographic technique on flexible substrate were performed in cooperation with Thorsten Meyers at the Paderborn University. The process was published in [VMWH16b].
- 6.
The etching processes were preferably conducted at room temperature. This was done aiming at a better and smoother later transfer of the process to polymeric substrates.
- 7.
The photoresist Clariant AZ 5214E can be employed using its positive or negative tone character depending on the processing performed as described in [Mic00].
- 8.
The results concerning the quality of the deposition of the water-based ZnO nanoparticle dispersion were partially published in [VMH17].
- 9.
The high-k nanocomposite surface character modification from hydrophobic to hydrophilic is ascribed to the variation on the surface roughness and on the amount of OH- present at the surface. The origin of such effects is still under research, and more information can be found in [MVB+17a].
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Vidor, F.F., Wirth, G.I., Hilleringmann, U. (2018). Integration. In: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer, Cham. https://doi.org/10.1007/978-3-319-72556-7_3
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