Abstract
The uniqueness of the “all-silicon optical testing methodology” lies in the fact that it is fully an optical technique utilizing visible light, and it is completely compatible with standard silicon IC processing. It uses optical signals transmitted to the circuit for “inputting” the stimulus data and also uses optical signals from the circuit for observation of the logic output. In addition, this approach is fully compatible with the simultaneous use of mechanical probes for power and other signals. The approach avoids many of the limitations of other contactless techniques.
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S. Sayil, D.V. Kerns, S.E. Kerns, Comparison of contactless measurement and testing techniques to a new all-silicon optical test and characterization method. IEEE Trans. Instrum. Meas. 54(5), 2082–2089 (2005)
S. Sayil, “Optical Contactless Probing: An all-silicon, fully optical approach”- Special feature article. IEEE Des. Test Comput. 23(2), 138–146 (2006)
R. Newman, Visible light from a silicon p-n junction. Phys. Rev. 100(2), 700–703 (1955)
D. Jiang, B.L. Bhuva, S.E. Kerns, D. V. Kerns, Comparative analysis of metal and optical interconnect technology, in Proceedings of IEEE International Interconnect Technology Conference, 2000, pp. 25–27
A.T. Fiory, N.M. Ravindra, Light emission from silicon: some perspectives and applications. J. Electron. Mater. 32(10), 1043–1051 (2003)
L.T. Canham, Silicon quantum wire array fabrication by electro-chemical and chemical dissolution of wafers. Appl. Phys. Lett. 57, 1046–1048 (1990)
F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, P.G. Fallica, Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices. Appl. Phys. Lett. 81, 3242–3244 (2002)
M.E. Castagna, S. Coffa, M. Monaco, L. Caristia, A. Messina, R. Mangano, C. Buongiorno, Si-based materials and devices for light emission in silicon. Phys. E. 16, 547–553 (2003)
A. Nazarov, J.M. Sun, W. Skorupa, R.A. Yankov, I.N. Osiyuk, I.P. Tjagulskii, V.S. Lysenko, T. Gebel, Light emission and charge Trapping in Er-doped silicon dioxide films containing silicon nanocrystals. Appl. Phys. Lett. 86, 151914 (2005)
N. Akil, S.E. Kerns, D.V. Kerns, A. Hoffmann, J.-P. Charles, A multimechanism model for photon generation by silicon junctions in avalanche breakdown. IEEE Trans. Electron Devices 46(5), 1022–1028 (1999)
A. Chatterjee, B. Bhuva, Accelerated stressing and degradation mechanisms for Si-based photoemitters. IEEE Trans. Device Mater. Reliab. 2(3) (2002)
A. Chatterjee, B. Bhuva, R. Schrimpf, High-speed light modulation in avalanche breakdown mode for Si diodes. IEEE Electron Device Letters 25(9) (2004)
S. Sayil, Avalanche breakdown in silicon devices for contactless logic testing and optical interconnect. Analog Integr. Circ. Sig. Process 56(3), 213–221 (2008)
J.C. Tsang, J.A. Kash, D.P. Vallett, Picosecond imaging circuit analysis. IBM J. Res. Dev. 44(4), 583–603 (2000)
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Sayil, S. (2018). All-Silicon Optical Technology for Contactless Testing of Integrated Circuits. In: Contactless VLSI Measurement and Testing Techniques. Springer, Cham. https://doi.org/10.1007/978-3-319-69673-7_9
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DOI: https://doi.org/10.1007/978-3-319-69673-7_9
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