Abstract
In the previous Chapter, we demonstrated that sub-electron read noise performance can be achieved, in a standard CIS process, at room temperature by optimal design. The design optimization included, for the first time, the choice of a thin oxide PMOS SF. These measurements gave promising results but on a small number of isolated pixels.
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Boukhayma, A. (2018). Characterization of a Sub-electron Readout Noise VGA Imager in a Standard CIS Process. In: Ultra Low Noise CMOS Image Sensors . Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-68774-2_7
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DOI: https://doi.org/10.1007/978-3-319-68774-2_7
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