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Measurement of Power Transistors Dynamic Parameters

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Mechatronics 2017 (MECHATRONICS 2017)

Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 644))

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Abstract

This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.

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References

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Acknowledgements

This research work has been carried out in the Centre for Research and Utilization of Renewable Energy (CVVOZE). Authors gratefully acknowledge financial support from the Ministry of Education, Youth and Sports of the Czech Republic under NPU I programme (project No. LO1210).

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Correspondence to Petr Prochazka .

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Prochazka, P., Miklas, J., Pazdera, I., Patocka, M., Knobloch, J., Cipin, R. (2018). Measurement of Power Transistors Dynamic Parameters. In: Březina, T., Jabłoński, R. (eds) Mechatronics 2017. MECHATRONICS 2017. Advances in Intelligent Systems and Computing, vol 644. Springer, Cham. https://doi.org/10.1007/978-3-319-65960-2_70

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  • DOI: https://doi.org/10.1007/978-3-319-65960-2_70

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-65959-6

  • Online ISBN: 978-3-319-65960-2

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