Memristor Device Modeling

  • Heba Abunahla
  • Baker Mohammad
Part of the Analog Circuits and Signal Processing book series (ACSP)


This chapter presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviors. A detailed MATLAB-based algorithm is developed to clarify and simplify the simulation environment. Moreover, the provided model is used to simulate and predict the effect of oxide thickness, material type, and operating temperatures on the electrical characteristics of the device. The value of this contribution is to provide a framework intended to simulate anionic memristor devices using correlated mathematical models. In addition, the model can be used to explore device materials and predict its performance.


Memristor VCM Switching Vacancy Profile Temperature Oxide Thickness Parameter Potential Voltage Poisson Boltzmann 


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Copyright information

© Springer International Publishing AG 2018

Authors and Affiliations

  1. 1.Khalifa University of Science and TechnologyAbu DhabiUnited Arab Emirates

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