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Technologies for Millimeter-Wave Power Amplifiers

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Millimeter-Wave Power Amplifiers

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Abstract

In the last few decades, semiconductor technology has steadily grown in maturity, with silicon transistors able to reach increasingly higher unity-gain frequency (\( f_{ \hbox{max} } \)) values. This has proven to be true for technologies based on both CMOS and SiGe BiCMOS. Higher \( f_{ \hbox{max} } \) values in turn lead to transistors that are suitable for highly complex integrated circuits operating in millimeter-wave bands. The large performance gains observed in signal processing and other digital circuits based on silicon technologies serve as an excellent motivator for the continued advancement of such technologies, particularly CMOS.

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    Jaco du Preez & Saurabh Sinha

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du Preez, J., Sinha, S. (2017). Technologies for Millimeter-Wave Power Amplifiers. In: Millimeter-Wave Power Amplifiers. Signals and Communication Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-62166-1_3

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