Abstract
The piezoresistance of SiC nanowires is of interest as a means to scale down devices size as well as to enhance the sensitivity of sensors (Phan et al., J. Microelectromech. Syst. 24(6):1663–1677, 2015, [1]; Shao et al., Appl. Phys. Lett. 101(23):233109, 2012, [2]; Gao et al., Chem. Comm. 47(43):11993–11995, 2011, [3]). However, as presented in Chap. 1, there have been a limited number of experimental work on the piezoresistance of SiC, which were fabricated using bottom up process (Shao et al., Appl. Phys. Lett. 101(23):233109, 2012, [2]; Gao et al., Chem. Comm. 47(43):11993–11995, 2011, [3]; Bi et al., J. Mater. Chem. C 1(30):4514–4517, 2013, [4]).
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Phan, HP. (2017). The Piezoresistive Effect of Top Down p-Type 3C-SiC Nanowires. In: Piezoresistive Effect of p-Type Single Crystalline 3C-SiC. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-55544-7_6
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