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Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on the Si(100):H Surfaces

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Book cover On-Surface Atomic Wires and Logic Gates

Part of the book series: Advances in Atom and Single Molecule Machines ((AASMM))

Abstract

In this chapter, we give a short review about the methods that are commonly used to passivate the Si(100) surface with hydrogen atoms. The wet technique is discussed in terms of surface pollution and surface roughness. A basic recipe is given. A second part is devoted to the methods commonly used with vacuum techniques. A discussion is done on the hydrogenation parameters to improve the surface quality at the atomic scale, in particular the one that concerns the formation of various phases such as the 3×1 and dihydride. A third method is also detailed and permits the surface hydrogenation at the atomic scale allowing to design some patches on the Si(100) surface of a few nanometer.

Reprinted (excerpt and figures) with permission from A. Bellec, D. Riedel, G. Dujardin, N. Rompotis and L.Kantorovich, Phys. Rev. B 78, 165302 (2008), DOI:10.1103/PhysRevB.78.165302, Copyright 2008 by the American Physical Society, from A. Bellec, D. Riedel, G. Dujardin, O. Boudrioua, L. Chaput, L. Stauffer and P. Sonnet, Phys. Rev. B 80, 245434 (2009), DOI:10.1103/PhysRevB.80.245434, Copyright 2009 by the American Physical Society and from H. Labidi, L. Kantorovich and D. Riedel, Phys. Rev. B 86, 165441 (2012), DOI:10.1103/PhysRevB.86.165441, Copyright 2012 by the American Physical Society.

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  1. CNRS, Institut des Sciences Moléculaires d’Orsay (ISMO), Université Paris-Sud, Université Paris-Saclay, 91405, Orsay, France

    Damien Riedel

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  1. Damien Riedel
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  1. Centre for Nanometer-Scale Science, Jagiellonian University, NANOSAM Centre for Nanometer-Scale Science, Krakow, Poland

    Marek Kolmer

  2. CEMES-CNRS , Toulouse, France

    Christian Joachim

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Riedel, D. (2017). Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on the Si(100):H Surfaces. In: Kolmer, M., Joachim, C. (eds) On-Surface Atomic Wires and Logic Gates . Advances in Atom and Single Molecule Machines. Springer, Cham. https://doi.org/10.1007/978-3-319-51847-3_1

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