Abstract
Silicon carbide (SiC) is a technologically important ceramic, due to its high hardness, optical properties, and thermal conductivity. The high strength of SiC is a consequence of the strong covalent bonds (similar to diamonds) providing resistance to high pressures. The properties of SiC, which are similar to those of diamonds, have opened the gem industry to this material for use as a possible diamond substitute. However, a very important application of SiC is in microelectromechanical systems (MEMS), such as in wide-band gap semiconductors and power semiconductors, due its inherent strength and durability. Creep in polycrystalline and single-crystal SiC is the subject of this chapter. SiC is reinforced with fibers among them SiC fibers. Creep rupture is evaluated in a section devoted to this subject. Superplasticity observed in SiC is also discussed.
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Pelleg, J. (2017). Creep in Silicon Carbide (SiC). In: Creep in Ceramics. Solid Mechanics and Its Applications, vol 241. Springer, Cham. https://doi.org/10.1007/978-3-319-50826-9_15
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DOI: https://doi.org/10.1007/978-3-319-50826-9_15
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