Abstract
The attempt to use molecules as functional parts of nanoelectronic devices is based on the benefits expected from their inherent properties. They are stable, with well-defined energy levels, capable of combining chemically to form larger composites with desired properties, capable of self-assembling in dense nanostructures on surfaces and the energy required for their manipulation and during device operation is much less compared to solid-state semiconductor devices. Furthermore if the target of scaling down a specific logic operation in one molecule is achieved, current miniaturization limits will be surpassed.
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S. Arahdya, L. Venkataraman, Single-molecule junctions beyond electronic transport. Nat. Nanotechnol. 8, 399–410 (2013)
P. Argitis, R. Shrinivas, J. Carls, A. Heller, Micropatterned films of Tungsten nuclei for subsequent metallization formed of a phosphotungstic acid-based negative resist. J. Electrochem. Soc. 139, 2889–2894 (1992)
A. Aviram, M. Ratner, Molecular rectifiers. Chem. Phys. Lett. 29, 277–283 (1974)
C. Baffert, J. Boas, A. Bond, P. Koegerler, D. Long, J. Pilbrow et al., Experimental and theoretical investigations of the sulfite based polyoxometalate Mo18 O54 (SO4)3. Chem. Eur. J. 12(33), 8472–8483 (2006)
A. Balliou, G. Papadimitropoulos, G. Skoulatakis, S. Kennou, D. Davazoglou, S. Gardelis et al., Low dimensional polyoxometalate molecules/tantalum oxide hybrids for non-volatile capacitive memories. ACS Appl. Mater. Interface 8(11), 7212–7220 (2016)
A. Balliou, A. Douvas, P. Normand, D. Tsikritzis, S. Kennou, N. Glezos, Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors. J. Appl. Phys. 116(143703), 1–13 (2014)
C. Busche, L. Vila-Nadal, J. Yan, H. Miras, D.-L. Long, V. Georgiev et al., Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature 515, 545–549 (2014)
G. Cerofolini, E. Romano, Molecular electronics in silico. Appl. Phys. A 91, 181–210 (2008)
G. Chaidogiannos, D. Velessiotis, P. Argitis, P. Koutsolelos, C. Diakoumakos, D. Tsamakis et al., Tunneling and negative resistance effects for composite materials containing polyoxometalate molecules. Microelectron. Eng. 73–74, 746–751 (2004)
J. Chen, W. Wang, M. Reed, A. Rawlett, D. Price, J. Tour, Room-temperature negative differential resistance in nanoscale. Appl. Phys. Lett. 77, 1224–1226 (2000)
Y. Chen, G.-Y. Young, D. Ohlberg, X. Li, D. Steward, J. Jeppesen et al., Nanoscale molecular-switch crossbar. Nanotechnology 14, 462–468 (2003)
M. Clemente-Leon, E. Coronado, C. Gomez-Garcia, C. Mingotaud, S. Ravaine, G. Romualdo-Torres et al., Polyoxometalate monolayers in Langmuir-Blodgett films. Chem. Eur. J. 11, 3979–3987 (2005)
C. Collier, E. Wong, M. Belohradsky, F. Reymo, J. Stoddard, P. Kuekes et al., Electronically configurable molecular-based logic gates. Science 285, 391–394 (1999)
S. Cummings, J. Savchenko, T. Reng, Functionalization of flat Si surfaces with inorganic compounds—towards molecular CMOS hybrid devices. Coord. Chem. Reviews 255, 1587–1602 (2011)
G. Cuniberti, G. Fagas, K. Richter, Introducing Molecular Electronics (Springer, Berlin, 2005)
S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, 1995)
S. Datta, Lessons from Nanoelectronics: A New Perspective in Transport (World Scientific Publishing, 2012)
B. De Salvo, J. Buckley, Organic-based molecular and polymer memories. White Paper for ITRS ERD Working Group, 1–10 (2010)
B. De Salvo, J. Buckley, D. Vuillaume, Recent results on organic-based molecular memories. Curr. Appl. Phys. 11, e49–e57 (2011)
S. Deleonibus, Electronic Device Architectures for the post-CMOS Era (Pan Stanford Publishing, 2009)
S. Deruich, C. Rinfray, G. Izzet, J. Pinson, J.-J. Gallet, F. Kanoufi et al., Control of the grafting of hybrid polyoxometalates on metal and carbon surfaces: toward submonolayers. Langmuir 30, 2287–2296 (2014)
M. Di Ventra, S. Pantelides, N. Lang, Current-induced forces in molecular wires. Phys. Rev. Lett. 046801, 1–4 (2002)
I. Diez-Perez, J. Hiharth, Y. Lee, L. Yu, L. Adamska, M. Kozhusher et al., Rectification and stability of a single molecular diode with controlled orientation. Nature Chemistry 1, 635–641 (2009)
A. Douvas, E. Makarona, N. Glezos, P. Argitis, J. Mielzarski, E. Mielzarski, Polyoxometalate-based layered structures for charge transport control in molecular devices. ACS Nano 2(4), 733–742 (2008)
D. Ferry, S. Goodnick, Transport in Nanostructures (Cambridge Univeristy Press, 1997)
C. Fleming, D.-L. Long, M. Macmillan, J. Johnston, N. Bovet, V. Dhanak et al., Reversible electron-transfer reactions within a nanoscale metal oxide cage mediated by mewtallic substrates. Nat. Nanotechnol. 3, 229–233 (2008)
V. Georgiev, S. Amoroso, T. Mahmood Ali, L. Vila Nanal, Comparison between Bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Trans. Electron Devices 62, 680–684 (2015)
N. Glezos, P. Argitis, D. Velessiotis, C. Diakoumakos, Tunneling transport in polyoxometalate based composite materials. Appl. Phys. Lett. 83, 488–490 (2003)
N. Glezos, A. Douvas, P. Argitis, F. Saurenbach, J. Chrost, C. Livitsanos, Electrical characterization of molecular monolayers coantianing tungsten polyoxometalates. Microelectron. Eng. 83, 1757–1760 (2006)
S. Gowda, G. Mathur, Q. Li, S. Surthi, V. Misra, Hybrid Silicon/Molecular FETs: a study of the interaction of redox-molecules with Silicon MOSFETs. IEEE Trans. Nanotechnol. 5, 258–264 (2006)
T. He, J. He, M. Lu, B. Chen, H. Pang, W. Reus et al., Controlled modulation of conductance in silicon devices by molecular monolayers. J. Am. Chem. Soc. 128, 14537–14541 (2006)
K. Heinze, H. Lang, Ferrocene-Beauty and function. Organometallics 32(20) Special Issue, 5623–6146 (2013)
A. Hiskia, A. Mylonas, E. Papaconstantinou, Comparison of the photoredox properties of polyoxometalates and semiconducting particles. Chem. Soc. Rev. 30, 62–69 (2001)
ITRS Roadmap, 4. Emerging Research Devices, 6–22 (2013)
M. Iwamoto, M. Wada, T. Kubota, Electron tranpsort mechanism through polyimide Langmuir-Blodgett films containing porphyrin. Thin Solid Films 243, 472–475 (1994)
A. Jalabert, A. Amara, F. Clermidy, Molecular Electronics: Materials (Springer, Devices and Applications, 2008)
N. Joo, S. Renaudineau, G. Delapierre, L.-M. Chamoreau, R. Thouvenot, P. Gouzerh et al., Organosilyl/-germyl polyoxotungstate hybrids for covalent grafting onto silicon surfaces: towards molecular memories. Chem. Eur. J. 16, 5043–5051 (2010)
M. Jurow, A. Schuckman, J. Batteas, C. Drain, Porphyrins as molecular electronic components of functional devices. Coord. Chem. Rev. 254, 2297–2310 (2010)
J. Kang, D. Schroder, The pulsed MIS capacitor. A critical overview. Phys. Stat. Sol. A 89, 13–43 (1985)
E. Kapetanakis, A. Douvas, D. Velessiotis, E. Makarona, P. Argitis, N. Glezos et al. (2008). Molecular storage elements for proton memory devices. Adv. Mater. 4568–4584
E. Kapetanakis, A. Douvas, D. Velessiotis, E. Makarona, P. Argitis, N. Glezos et al., Hybrid organic–inorganic materials for molecular proton memory devices. Org. Elec. 10, 711–718 (2009)
D. Katsoulis, A survey of applications of polyoxometalates. Chem. Rev. 98, 359–387 (1998)
W. Kuhr, A. Gallo, R. Manning, C. Rhodine,. Molecular Memories based on a CMOS Platform. MRS Bull. 838–842 (2004) (November)
C. Li, W. Fan, B. Lei, D. Zhang, S. Han, T. Tang et al., Multilevel memory based on molecular devices. Appl. Phys. Lett. 84, 1949–1951 (2004)
E. Li, N. Marzari, Conductance switching and many-valued logic in porphyrin assemblies. J. Phys. Chem. Lett. 4, 3039–3044 (2013)
Q. Li, Hybrid silicon-molecular electronics. Mod. Phys. Lett. B 22, 1183–1202 (2008)
Q. Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L. Yu et al., Multibit memory using self-assembly of mixed ferrocene-porphyrin monolayers on siilicon. Adv. Mater. 16, 133–137 (2004)
Q. Li, G. Mathur, M. Homsi, S. Surthi, V. Misra, V. Malinovski et al., Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on siliconsurfaces for memory applications. Appl. Phys. Lett. 81, 1494–1496 (2002)
Q. Li, S. Surthi, G. Mathur, S. Gowda, V. Misra, T. Sorenson et al., Electrical characterizationof redox-active molecular monolayers on SiO2 for memory applications. Appl. Phys. Lett. 83, 198–200 (2003)
Z. Liu, A. Yasseri, J. Lindsey, D. Bocian, Molecular memories that survive silicon device processing and real-world operation. Science 302, 1543–1545 (2003)
D. Long, L. Cronin, Towards polyoxometalate-integrated nanosystems. Chem. Eur. J. 3698–3706 (2006)
D. Long, R. Tsunashima, L. Cronin, Polyoxomatalates: building blocks for functional nanoscale systems. Angew. Chem. Int. Ed. 49, 2–25 (2010)
S. Lyshevski,. Nano and Molecular Electronics Handbook (CRC Press, Taylor & Francis, 2007)
E. Makarona, E. Kapetanakis, D. Velessiotis, A. Douvas, P. Argitis, P. Normand et al., Vertical devices of self-assembled hybrid organic/inorganic monolayers based on tungsten polyoxometalates. Microelectron. Eng. 85, 1399–1402 (2008)
B. Mann, H. Kuhn, Tunneling through fatty acid salt monolayers. J. Appl. Phys. 42(11), 4398–4406 (1971)
R. McCreery, Molecular electronic junctions. Chem. Mater. 16, 4477–4493 (2004)
J. Meena, S. Sze, U. Chand, T. Tseng, Overview of emerging nonvolatile memory technologies. Nanoscale Res. Lett. 9(126), 1–33 (2014)
M. Petty, Molecular Electronics: From Principles to Practice (John Wiley and Sons, 2007)
M. Pope, A. Muller, Polyoxometalate chemistry: an old field with new dimensions in several disciplines. Angew. Chem. Int. Ed. Engl. 30, 34–48 (1991)
T. Pro, J. Buckley, K. Huang, A. Calborean, M. Gely, G. Delapierre et al., Investigation of hybrid molecular/silicon memories with redox-active molecules acting a storage media. IEEE Trans. Nanotechnol. 204–213 (2009)
A. Proust, R. Thouvenot, P. Gouzerh, Functionalization of polyoxometalates: towards advanced applications in catalysis and materials science. Chem. Commun. 1837–1852 (2008)
M. Ratner, A brief history of molecular electronics. Nat. Nanotechnol. 8, 378–381 (2013)
M. Reed, C. Zhou, C. Muller, T. Burgin, J. Tour, Conductance of a Molecular Junction. Science 278, 252–253 (1997)
C. Richter, C. Hacker, L. Richter, E. Vogel, Molecular devices formed by direct monolayewr attachment to silicon. Solid State Electron. 48, 1747–1752 (2004)
K. Roth, N. Dontha, R. Dabke, D. Gryko, C. Clausen, J. Lindsey et al., Molecular approach toward information storage basedon the redox properties pf porphyrines in self-assembled monolayers. JVST B 18, 2359–2364 (2000)
K. Roth, A. Yasseri, Z. Liu, R. Dabke, V. Malinovski, K.-H. Schweikart et al., Measurements of electron-transfer rates of charge-storage molecular monolayers on Si(100). Toward hybrid molecular/ semiconductor information storage devices. JACS 125, 505–517 (2003)
J. Shaw, T.-H. Zhong, K. Hughes, T.-H. Hou, H. Raza, J. Bellfy et al., Integration of self-assembled redox molecules in flash memory devices. IEEE Trans. Electron Device 58, 826–834 (2011)
W. Shockley, W. Read, Statistics of the recombination of holes and electrons. Phys. Rev. 87, 835–842 (1952)
H. Song, Y. Kim, Y.-H. Jang, H. Jeong, M. Reed, T. Lee, Observation of molecular orbital gating. Nature 462, 1039–1043 (2009)
H. Song, M. Reed, T. Lee, Single molecule electronic devices. Adv. Mater. 23, 1583–1608 (2011)
A. Szuchmacher Blum, J. Kushmerick, D. Long, C. Patterson, J. Yang, J. Henderson et al., Molecularly inherent voltage-controlled conductance switching. Nature Mater. 4, 167–172 (2005)
K. Terada, K. Kanaizuka, M. Iyer, M. Sannodo, S. Saito, K. Kobayashi et al., Memory effects in molecular films of free-standing rod-shaped Ruthenium Complexes on an electrode. Angew. Chem. Int. Ed. 50, 6287–6291 (2011)
J.M. Tour, Molecular Electronics - Commercial Insights, Chemistry, Devices and Programming (World Scientific Publishing Co. Pte. Ltd., 2003)
S. Van der Molen, P. Liljenroth, Charge transport through molecular. J. Phys. Condens. Matter 22(133001), 1–30 (2010)
D. Velessiotis, A. Douvas, P. Dimitrakis, P. Argitis, N. Glezos, Conduction mechanisms in tungsten-polyoxometalate self-assembled molecular junctions. Microelectron. Eng. 97, 150–153 (2012)
D. Velessiotis, N. Glezos, V. Ioannou-Sougleridis, Tungstate polyoxometalates as active components of molecular devices. J. Appl. Phys. 98, 084503_1–4 (2005)
F. Volatron, J.-M. Noel, C. Rinfray, P. Decorse, C. Combellas, F. Kanoufi et al., Electron transfer properties of a monolayer of hybrid polyoxometalates on silicon. J. Mater. Chem. C 3, 6266–6275 (2015)
D. Vuillaume, S. Lenfant, The metal/organic monolayer interface in molecular electronic devices. Microelectron. Eng. 70, 539–550 (2003)
D. Vuillaume, Molecular nanoelectronics. Proc. IEEE 98, 2111–2123 (2010)
W. Wang, T. Lee, M. Reed, Mechanism of electron conduction in self-assembled alkanethiol monolayer devices. Phys. Rev. B 68(035416), 1–6 (2003)
M. Yaqub, J. Walsh, T. Keyes, A. Proust, C. Rinfray, G. Izzet et al., Electron transfer to covalently immobilized Keggin polyoxotungstates on gold. Langmuir 30, 4509–4516 (2014)
A. Yella, H.-W. Lee, H. Tsao, C. Yi, A. Chandiran, M. Nazeeruddin et al., Porphyrin-sensitized solar cells with cobalt (II/III)–based redox electrolyte exceed 12 percent efficiency. Science 334, 629–634 (2011)
H. Zhu, Q. Li, Novel molecular non-volatile memory: application of redox active molecules. Appl. Sci. 6(7), 1–15 (2016)
H. Zhu, C. Hacker, S. Pookpanratana, C. Richter, H. Yuan, H. Li et al., Non-volatile memory with self-assembled ferrocene charge trapping layer. Appl. Phys. Lett. 106(053102), 1–4 (2013)
H. Zhu, S. Pookpanratana, J. Bonevich, S. Natoli, C. Hacker, T. Ren et al., Redox-active molecular nanowire flash memory for high-endurance and high-density nonvolatile memory applications. ACS Appl. Mater. Interface 7(49), 27306–27313 (2015)
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Glezos, N. (2017). Hybrid Memories Based on Redox Molecules. In: Dimitrakis, P. (eds) Charge-Trapping Non-Volatile Memories. Springer, Cham. https://doi.org/10.1007/978-3-319-48705-2_3
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