Abstract
The practical importance of the reactions between a semiconductor and a metal system cannot be overstated. Fundamental physics itself offers also a wide variety of interesting phenomena. Unlike the “clean” metal-metal reactions nucleation or interface control is observed for some metal-silicon reactions.
In this work we show our results for bi- and trilayered Al/a-Si, Cu/a-Si and Ni/a-Si model system. Our main investigation method was atom probe tomography, which allowed the local nanoscale investigation of the interfaces. Both the Cu- and Ni-Si system is characterized by a strong asymmetry in respect to the stacking order. The metal on Si transition was much broader and this allowed an almost instantaneous nucleation of the product phase. The Si on metal interface remained sharp and a considerable annealing time was required for the appearance of the phase. The subsequent growth of the Cu3Si layer followed a linear kinetics.
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F. Nemouchi, D. Mangelinck, C. Bergmann, P. Gas and U. Smith, Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silcide thin films on a Si substrate, Appl. Phys. Lett., 86 (2005) 041903.
J.W. Kim, J.H. Ryu, K.T. Lee, and S.M. Oh, Improvement of silicon powder negative electrodes by copper electroless deposition for lithium secondary batteries, J. Power Sources, 147 (2005) 227–233.
Z. Wang, L.P.H. Jeurgens, J.Y. Wang and E.J. Mittemeijer, Fundamentals of metal induced crystallization of amorphous semiconductors, Adv. Eng. Mater., 11 (2009) 131–135.
F.M. d’Heurle and P. Gas, Kinetics and formation of silicides: a review, J. Mater. Res., 1 (1986), 205–221.
P. Stender, T. Heil, H. Kohl and G. Schmitz, Quantitative comparison of energy-filtering transmission electron microscopy and atom probe tomography, Ultramicroscopy, 109 (2009) 612–618.
R. Schlesiger, C. Oberdorfer, R. Würz, G. Greiwe, P. Stender, M. Artmeier, P. Pelka, F. Spaleck and G. Schmitz, Design of a laser assisted atom probe at Münster University, Rev. Sci. Instrum., 81 (2010) 043703.
H. Oeschner, R. Getto and M. Kopnarski, Quantitative characterization of solid state phases by secondary neutral mass spectrometry, J. Appl. Phys., 105 (2009) 063523.
B. Parditka, M. Verezhak, Z. Balogh, A. Csik, G.A. Langer, D.L. Beke, M. Ibrahim, G. Schmitz and Z. Erdélyi, Phase growth in amorphous Si-Cu system as shown by the combination of SNMS, XPS, XRD and APT technique, Acta Mater., (2013) doi: 10.1016/j.actamat.2013.08.021.
Z. Balogh, P. Stender, M.R. Chellali and G. Schmitz, Investigation of interfaces by atom probe tomography, Metal. Mater. Trans. A, 44 (2013) 4487–4495.
R.R. Chromik, W.K. Neil and E.J. Cotts, Thermodynamic and kinetic study of solid state reactions in the Ni-Cu system, J. Appl. Phys., 86 (1999) 4273–4281.
R. Pretorius, C.C. Theron, A. Vantomme and J.W. Mayer, Compound phase formation in thin film structures, Crit. Rev. Solid State, 24 (1999) 1–62.
M. Ibrahim, B. Parditka, A. Fuhrich, Z. Balogh, P. Stender, Z. Erdélyi and G. Schmitz, Growth kinetics and interface structure of copper silicides studied by atom probe tomography, Phys. Stat. Sol. (c), in print.
A. Cros, M.O. Aboelfotoh and K.N. Tu, Formation oxidation and electrical properties of copper silicides, J. Appl. Phys., 67 (1990) 3328.
S.Coffa, J.M. Poate, D.C. Jacobson, W. Frank and W. Gustin, Determination of diffusion mechanisms in amorphous silicon, Phys. Rev. B, 45 (1992) 8355–8358.
C. Cserháti, Z. Balogh, A. Csik, G.A. Langer, Z. Erdélyi, Gy. Glodân, G.L. Katona, D.L. Beke, I. Zizak, N. Darowski, E. Dudzik and R. Feyerheim, Linear growth kinetics of nanometric silicides in Co/amorphous-Si and Co/CoSi/amorphous-Si thin films, J. Appl. Phys., 104(2008) 024311.
T.E. Schlesinger, R.C. Cammarata and S.E. Prokes, Kinetics of suicide formation in chromium amorphous silicion multilayer films, Appl. Phys. Lett., 59 (1991) 449–451.
D. Mangelinck, K. Houmadda, A. Portavoce, C. Perrin, R. Daineche, M. Descoins, D.J. Larson and P.H. Clifton, Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si, Scripta Mater., 62 (2010) 568–571.
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Balogh, Z. et al. (2014). Interfacial Reaction and Phase Growth for Various Metal/Amorphous Silicon System. In: TMS 2014: 143rd Annual Meeting & Exhibition. Springer, Cham. https://doi.org/10.1007/978-3-319-48237-8_124
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DOI: https://doi.org/10.1007/978-3-319-48237-8_124
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-48593-5
Online ISBN: 978-3-319-48237-8
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