Abstract
In this letter, we present a quantitative analysis of different electric field intensity on interface atom diffusion in a Cu/Ta/Si stack at 650 °C annealing. It was found that the external electric field accelerated the Cu atom diffusion in the Ta layer. With the increment of electric field intensity, the effect of the electric field upon the atomic diffusion becomes more significant. The mechanism of accelerated effect is mainly attributed to the perturbation of the electric state of the defects in the interface and grain interior.
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© 2015 TMS (The Minerals, Metals & Materials Society)
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Wang, L., Xu, J.H., Yu, L.H., Dong, S.T. (2015). Effect of Electric Field Intensity on Atom Diffusion in Cu/Ta/Si Stacks. In: TMS 2015 144th Annual Meeting & Exhibition. Springer, Cham. https://doi.org/10.1007/978-3-319-48127-2_72
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DOI: https://doi.org/10.1007/978-3-319-48127-2_72
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-48608-6
Online ISBN: 978-3-319-48127-2
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