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Physics and Technology of Emerging Non-Volatile Memories

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Book cover In Search of the Next Memory

Abstract

Although flash technology has clearly demonstrated its capability to shrink the cell size according to Moore’s law, further reduction of the dimension is facing fundamental physical limits, and it is demanding technological developments that are making the cell scaling less convenient from the economic standpoint. To improve the performance and scalability with respect to floating-gate devices, innovative concepts for alternative NVM have been proposed in the past and are under investigation today, as we dream of find the ideal memory that combines fast read, fast write, non-volatility, low-power, and unlimited endurance, and obviously at a cost comparable to flash or DRAM.

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Authors and Affiliations

  1. Technology Development, Micron Semiconductor Italia, Via Trento, 26, 20871, Vimercate, MB, Italy

    Agostino Pirovano

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  1. Agostino Pirovano
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Correspondence to Agostino Pirovano .

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Editors and Affiliations

  1. Milan, Italy

    Roberto Gastaldi

  2. ST Microelectronics , Milan, Italy

    Giovanni Campardo

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Pirovano, A. (2017). Physics and Technology of Emerging Non-Volatile Memories. In: Gastaldi, R., Campardo, G. (eds) In Search of the Next Memory. Springer, Cham. https://doi.org/10.1007/978-3-319-47724-4_3

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  • DOI: https://doi.org/10.1007/978-3-319-47724-4_3

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-47722-0

  • Online ISBN: 978-3-319-47724-4

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