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Strain Engineering of 2D Materials

  • Seymur Cahangirov
  • Hasan Sahin
  • Guy Le Lay
  • Angel Rubio
Chapter
Part of the Lecture Notes in Physics book series (LNP, volume 930)

Abstract

When bulk structures are thinned down to their monolayers, degree of orbital interactions, mechanical properties and electronic band dispersion of the crystal structure become highly sensitive to the amount of applied strain. The source of strain on the ultra-thin lattice structure can be (1) an external device or a flexible substrate that can stretch or compress the structure, (2) the lattice mismatch between the layer and neighboring layers or (3) stress induced by STM or AFM tip.

Keywords

Monolayer MoSe2 Black Phosphorus Phonon Branch Single Layer MoSe2 Molybdenum Disulphide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer International Publishing AG 2017

Authors and Affiliations

  • Seymur Cahangirov
    • 1
  • Hasan Sahin
    • 2
  • Guy Le Lay
    • 3
  • Angel Rubio
    • 4
  1. 1.University of the Basque Country, Materials Unit Joint CenterDonostiaSpain
  2. 2.Department of PhotonicsIzmir Institute of TechnologyIzmirTurkey
  3. 3.Aix Marseille Université CNRSMarseille CedexFrance
  4. 4.Basque Country, Materials Unit Joint CenterDonostiaSpain

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