Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes

  • Daniel MoraruEmail author
  • Manoharan Muruganathan
  • Le The Anh
  • Ratno Nuryadi
  • Hiroshi Mizuta
  • Michiharu Tabe
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 519)


Inter-band tunneling current is an attractive transport mechanism for future generations of electronics. However, this mechanism is limited by the momentum conservation law which requires phonon assistance in tunneling due to the indirect-bandgap nature of Si. Here, we show that in low-dimensional pn Esaki diodes, inter-band tunneling current can be enhanced by the resonance of discrete dopants with deepened energy levels. Current enhancement is comparable with the background direct inter-band tunneling and can be modulated by the applied biases, suggesting a pathway for controlling atomic-level resonances for practical purposes.


Inter-band tunneling P-B pair Tunnel diode Atomic pn diode 


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Copyright information

© Springer International Publishing AG 2017

Authors and Affiliations

  • Daniel Moraru
    • 1
    Email author
  • Manoharan Muruganathan
    • 2
  • Le The Anh
    • 2
  • Ratno Nuryadi
    • 3
  • Hiroshi Mizuta
    • 2
    • 4
  • Michiharu Tabe
    • 1
  1. 1.Research Institute of ElectronicsShizuoka UniversityHamamatsuJapan
  2. 2.Japan Advanced Institute of Science and Technology (JAIST)NomiJapan
  3. 3.Agency for Assessment and Application of TechnologySouth TangerangIndonesia
  4. 4.Faculty of Physical Sciences and EngineeringUniversity of SouthamptonSouthamptonUK

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