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Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes

  • Daniel MoraruEmail author
  • Manoharan Muruganathan
  • Le The Anh
  • Ratno Nuryadi
  • Hiroshi Mizuta
  • Michiharu Tabe
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 519)

Abstract

Inter-band tunneling current is an attractive transport mechanism for future generations of electronics. However, this mechanism is limited by the momentum conservation law which requires phonon assistance in tunneling due to the indirect-bandgap nature of Si. Here, we show that in low-dimensional pn Esaki diodes, inter-band tunneling current can be enhanced by the resonance of discrete dopants with deepened energy levels. Current enhancement is comparable with the background direct inter-band tunneling and can be modulated by the applied biases, suggesting a pathway for controlling atomic-level resonances for practical purposes.

Keywords

Inter-band tunneling P-B pair Tunnel diode Atomic pn diode 

References

  1. 1.
    Esaki, L.: New phenomenon in narrow Germanium p-n junctions. Phys. Rev. 109, 603 (1958)CrossRefGoogle Scholar
  2. 2.
    Chynoweth, A.G., Logan, R.A., Thomas, D.E.: Phonon-assisted tunneling in silicon and germanium Esaki junctions. Phys. Rev. 125, 877 (1962)CrossRefGoogle Scholar
  3. 3.
    Ionescu, A.M., Riel, H.: Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329 (2011)CrossRefGoogle Scholar
  4. 4.
    Mori, T., et al.: Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap. Appl. Phys. Lett. 106, 083501 (2015)CrossRefGoogle Scholar
  5. 5.
    Bessire, C.D., Björk, M.T., Schmid, H., Schenk, A., Reuter, K.B., Riel, H.: Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes. Nano Lett. 11, 4195 (2011)CrossRefGoogle Scholar
  6. 6.
    Tabe, M., Tan, H.N., Mizuno, T., Muruganathan, M., Anh, L.T., Mizuta, H., Nuryadi, R., Moraru, D.: Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes. Appl. Phys. Lett. 108, 093502 (2016)CrossRefGoogle Scholar
  7. 7.
    Savchenko, A.K., Kuznetsov, V.V., Woolfe, A., Mace, D.R., Pepper, M., Ritchie, D.A., Jones, G.A.C.: Resonant tunneling through two impurities in disordered barriers. Phys. Rev. B 52, R17021(R) (1995)CrossRefGoogle Scholar
  8. 8.
    Diarra, M., Niquet, Y.M., Delerue, C., Allan, G.: Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement. Phys. Rev. B 75, 045301 (2007)CrossRefGoogle Scholar

Copyright information

© Springer International Publishing AG 2017

Authors and Affiliations

  • Daniel Moraru
    • 1
    Email author
  • Manoharan Muruganathan
    • 2
  • Le The Anh
    • 2
  • Ratno Nuryadi
    • 3
  • Hiroshi Mizuta
    • 2
    • 4
  • Michiharu Tabe
    • 1
  1. 1.Research Institute of ElectronicsShizuoka UniversityHamamatsuJapan
  2. 2.Japan Advanced Institute of Science and Technology (JAIST)NomiJapan
  3. 3.Agency for Assessment and Application of TechnologySouth TangerangIndonesia
  4. 4.Faculty of Physical Sciences and EngineeringUniversity of SouthamptonSouthamptonUK

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