Abstract
Wire bonding is by far the most dominate form of first-level chip connection. Around 85 % of the world’s electronic product is wire bonded representing over 15 trillion wire bonds on an annual basis. This chapter focuses on the basic techniques of wire bonding along with the materials, structures, and methods which enable its implementation. The emphasis is placed on ball bonding (thermosonic bonding) using both copper and gold bonding wire. Discussion of bonding machine parameters and various wire bond test methods are presented. Basic wire bond experimental studies are presented in some detail for two major purposes: (1) to highlight some of the key results of the experiments, and (2) to serve as a model for other researchers to either emulate or use as a starting point in their own wire bond investigations. Materials are fundamental to the reliability of wire bonding and where possible the author explores the major materials and material systems in some detail. Overall the chapter provides a frame work for the basic understanding of wire bonding for people new to the field as well as enough detailed information for the advanced practitioner.
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Acknowledgments
The author greatly acknowledges the support of the Johns Hopkins University Applied Physics Laboratory and the members of the original Microelectronics Group who aided in the preparation and measurement of the wire bonded samples reported in this study. A special thank you is given to Ms. Angelene Sutton for preparation of the original manuscript upon which this revised version is based.
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Charles, H.K. (2017). Advanced Wire Bonding Technology: Materials, Methods, and Testing. In: Lu, D., Wong, C. (eds) Materials for Advanced Packaging. Springer, Cham. https://doi.org/10.1007/978-3-319-45098-8_4
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