Abstract
Through-Silicon-Via (TSV) wafer processes have been reviewed by several authors previously, including temporary adhesive wafer bonding, high aspect ratio silicon etch, and wafer singulation. This chapter starts with a brief overview of TSV wafer fabrication and singulation processes. Then, it focuses on several key process issues which have not been discussed in previous review articles. The first process issue discussed in details here is the device wafer buckling or wrinkling postwafer thinning. This challenge might cause yield loss at the downstream lithography process. The fundamental mechanism behind this issue is investigated and several solutions are proposed. The second process discussed in details here is wafer debonding. Based on viscosity definition and wafer geometry, a closed-form analytical solution is proposed for the thermal sliding wafer debonding process, which can be used for process control and throughput optimization. The next two processes discussed are laser scribe and saw dicing, which impact die edge chipping and low-k inter layer dielectric (ILD) delamination. A closed-form solution of chipping induced by saw dicing is also investigated. The last process discussed in this chapter is the challenges and solution options for die pick and place.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
F. Niklaus, G. Stemme, J.-Q. Lu, R.J. Gutmann, Adhesive wafer bonding. J. Appl. Phys. 99, 031101 (2006)
B.G. Yacobi, S. Martin, K. Davis, A. Hudson, M. Hubert, Adhesive bonding in microelectronics and photonics. J. Appl. Phys. 91, 6227 (2002)
B. Wu, A. Kumar, S. Pamarthy, High aspect ratio silicon etch: a review. J. Appl. Phys. 108, 051101 (2010)
V. Jansen, M.J. de Boer, S. Unnikrishnan, M.C. Louwerse, M.C. Elwenspoek, Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment. J. Micromech. Microeng. 19(033001) (2009)
J.P. Gambino, S.A. Adderly, J.U. Knickerbocker, An overview of through-silicon-via technology and manufacturing challenges. Microelectron. Eng. 135, 73–106 (2015)
D. Henry, F. Jacquet, M. Neyret, X. Bailin, T. Enot, V. Lapras, C. Brunet-Manquat, J. Charbonnier, B. Aventurier, N. Sillon, Through silicon vias technology for CMOS image sensor packaging. Electronic Components and Technology Conference, 556–562, 2008
M. Puech, J.M. Thevenoud, J.M. Gruffat, N. Launay, N. Arnal, P. Godinat, Fabrication of 3D packaging TSV using DRIE. Design, Test, Integration and Packaging of MEMS/MOEMS (2008)
J. Lu, J. Mcmahon, R. Gutmann, 3D integration using adhesive, metal, and metal/adhesive as wafer bonding interfaces. MRS Fall Meeting Symposium E, 2008
R. Puligadda, S. Pillalamarri, W. Hong, C. Brubaker, M. Wimplinger, S. Pargfrieder, High-performance temporary adhesive for wafer bonding applications. Mater. Res. Soc. Proc. 970 (2007). 0970-Y04-09
M.H. Shungwu, D.L.W. Pang, S. Nathapong, P. Marimuthu, Temporary bonding of wafer to carrier for 3D-wafer level packaging. Electronics Packaging Technologies Conference, 405–411, 2008
J. Charbonnier, S. Cheramy, D. Henry, A. Astier, J. Brun, N. Sillon, Integration of a temporary carrier in a TSV process flow. Electronic Components and Technology Conference, 865–871, 2009
S. Pargfrieder, J. Burggraf, D. Burgstaller, M. Privett, A. Jouve, D. Henry, N. Sillon, 3D integration with TSV: temporary bonding and debonding. Solid State Technology (March 2009), 38–43
D. Bai, X. Zhong, R. Puligadda, J. Burggraf, D. Burgstaller, C. Lypka, J. Verzosa, Edge protection of temporary bonded wafers during backgrinding. ECS Trans. 18(1), 757–762 (2009)
J.P. Gambino, Thin silicon wafer processing and strength characterization. 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 199–207, 2013
M.K. Grief, J.A. Steele Jr., Warpage and mechanical strength studies of ultra thin 150 mm wafers. IEEE/CPMT Int’l Electronics Manufacturing Technology Symposium, 190–194, 1996
W. Kroninger, F. Mariani, Thinning and singulation of silicon: root causes of the damage in thin chips. Electronic Components and Technology Conference, 1317–1322, 2006
S. Chen, I.G. Shih, Y.N. Chen, C.Z. Tsai, J.W. Lin, E. Wu, How to improve chip strength to avoid die cracking in a package. IEEE Inter Society Conference on Thermal Phenomena, 268–273, 2004
V.L.W. Sheng, N. Khan, D. Kripesh, Y.S. UK, Ultra thinning of wafer for embedded module. IEEE Electronics Packaging Technology Conference, 837–842, 2006
L. Wetz, J. White, B. Keser, Improvement in WL-CSP reliability by wafer thinning. IEEE Electronic Components and Technology Conference, 853–856, 2003
S. Farrens, Wafer and die bonding technologies for 3D integration. MRS Fall 2008 Proceedings E
L. Marinier, W.V. Noort, R. Pellens, B. Sutedja, R. Dekker, H.V. Zeijl, Front- to back-side overlay optimization after wafer bonding for 3D integration. Elsevier Science
H. Shi, H. Huang, J. Bao, J. Im, P.S. Ho, Y. Zhou, J.T. Pender, M. Armacost, D. Kyser, Plasma altered layer model for plasma damage characterization of porous OSG films. IEEE Internationa Interconnect Technology Conference, 78–80, 2009
H. Shi, H. Huang, J. Im, P.S. Ho, Y. Zhou, J.T. Pender, M. Armacost, D. Kyser, Minimization of plasma ashing damage to OSG low-k dielectrics. IEEE International Interconnect Technology Conference, 1–3, 2010
H. Shi, Mechanistic study of plasma damage to porous low-k: process development and dielectric recover, PhD Dissertation, The University of Texas at Austin, 2010
C. Cassidy, F. Renz, J. Kraft, F. Schrank, Depth-resolved photoemission microscopy for localization of leakage currents in through Silicon Vias (TSVs). 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 35–740, 2009
Y. Mizushima, H. Kitada, K. Koshikawa, S. Suzuki, T. Nakamura, T. Ohba, Novel through silicon vias leakage current evaluation using infrared-optical beam irradiation. Jpn. J. Appl. Phys. 51(5S) (2012)
N. Ranganathan, D.Y. Lee, L. Youhe, G. Lo, K. Prasad, K.L. Pey, N. Ranganathan, D.Y. Lee, L. Youhe, G. Lo, K. Prasad, K.L. Pey, Influence of Bosch etch process on electrical isolation of TSV structures. IEEE Trans. Compon. Packag. Manuf. Technol. 1(10), 1497–1507 (2011)
T. Nakamura, H. Kitada, Y. Mizushima, N. Maeda, K. Fujimoto, T. Ohba, Comparative study of side-wall roughness effects on leakage currents in through-silicon via interconnects. 3D Systems Integration Conference (3DIC), 2011 I.E. International, 1–4, 2012
J.C. Lin, W.C. Chiou, K.F Yang, H.B. Chang, Y.C. Lin, E.B. Liao, J.P. Hung, Y.L. Lin, P.H. Tsai, Y.C. Shih, T.J. Wu, W.J. Wu, F.W. Tsai, Y.H. Huang, T.Y. Wang, C.L. Yu, C.H. Chang, M.F. Chen, S.Y. Hou, C.H. Tung, S.P. Jeng, D.C.H. Yu, High density 3D integration using CMOS foundry technologies for 28 nm node and beyond. IEEE International Electron Devices Meeting (IEDM), 2.1.1–2.1.4, 2010
T. Bandyopadhyay, R. Chatterjee, D. Chung, M. Swaminathan, R. Tummala, Electrical modeling of through silicon and package vias. IEEE International Conference on 3D System Integration, 1–8, 2009
J. An, K. Moon, S. Lee, D. Lee, K. Yun, B. Park, H. Lee, J. Sue, Y. Park, G. Choi, H. Kang, C. Chung, Annealing process and structural considerations in controlling extrusion-type defects Cu TSV. IEEE International Interconnect Technology Conference, 1–3, 2012
F. Inoue, T. Shimizu, R. Arima, H. Miyake, S. Shingubara, Electroless deposition of barrier and seed layers for via last Cu-TSV metalization. IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 1–3, 2012
M. Vagues, Analysing backside chipping issues of the die at wafer saw, in Partial Fulfillment of MatE 234, 10 May 2003, 23 p
D. Lishan, T. Laserand, K. Mackenzie, D. Pays-Volard, L. Martinez et al., Wafer dicing using dry etching on standard tapes and frames. International Symposium on Microelectronics, vol. 2014, no. 1. International Microelectronics Assembly and Packaging Society, 2014
H. Mei, R. Huang, H. Mei, R. Huang et al., Buckling modes of elastic thin films on elastic substrates. Appl. Phys. Lett. 90, 151902 (2007)
R. Huang, Kinetic wrinkling of an elastic film on a viscoelastic substrate. J. Mech. Phys. Solids 53, 63–89 (2005)
H. Mei, R. Huang, Concomitant wrinkling and buckle-delamination of elastic thin films on compliant substrates. Mech. Mater. 43, 627–642 (2011)
W.S. Lei, A. Kumar, R. Yalamanchi, Die singulation technologies for advanced packaging: A critical review. J. Vac. Sci. Technol. B 30(4), 040801-1-27 (2012)
M. Privett, F. Murauer, J. Burggraf, S. Pargfrieder, TSV thinned wafer debonding proces optimization. IWLPC (Wafer-Level Packaging) Conference Proceedings, 144–148, 2008
J. Li, H. Hwang, E. Ahn et al., Laser dicing and subsequent die strength enhancement technologies for ultra-thin wafer. Electronics Components and Technology Conference, 761–766, 2007
C.M. Dunsky, Laser material processing in microelectronics manufacturing: status and near term-term opportunities. Proc SPIE 5713, Photon Processing in Mircroelectronics and Photonics IV, 200–214, 2005
S.Y. Luo, Z.W. Wang, Studies of chipping mechanisms for dicing silicon wafers. Int. J. Adv Manuf. 35, 1206–1218 (2008)
K.W. Shi, K.Y. Yow, The characteristics and factors of a wafer dicing blade and its optimized interactions required for singulation high metal stack low-k wafers. IEEE 15th Electronics Packaging Technology Conference (EPTC 2013), 208–212
J.W. Lin, M.H. Cheng, Investigation of chipping and wear of silicon wafer dicing. J. Manuf. Process 16, 373–378 (2014)
S. Abdullah, S.M. Yusof, A. Jalar, M.F. Abdullah et al., Step cut for dicing laminated wafer in a QFN package. Solid State Sci. Technol. 16(2), 198–206 (2008)
M. Kumagai, T. Sakamoto, E. Ohmura, Laser processing of dobed silicon wafer by the Stealth Dicing, IEEE 1-4244-1142-4/07 (2007)
W.H. Teh, D.S. Boning, R.E. Welsh, Multi-strata stealth dicing before grinding for singulation-defects elimination and die strength enhancement: Experiment and simulation. IEEE Trans. Semicond. Manuf. 28(3), 408–423 (2015)
E. Fogarassy, S. Lazare, Laser Ablation of Electronic Materials (Elsevier, North Holland, 1992)
J.C. Miller, Laser Ablation, Springer Series, 1994
R.E. Russo, X.L. Mao, O.V. Borisvo, Laser ablation sampling. Trends Anal. Chem. 17(8–9), 461–469 (1988)
S.S. Mao, Experimental and Theoretical Studies of Picosecond Laser Interactions with Electronic Materials-Laser Ablation (University of California, Berkeley, CA, 2000)
J.R. Ho, C.P. Grigoropoulos, J.A.C. Humphrey, Computational study of heat transfer and gas dynamics in the pulsed laser evaporation of metals. J. Appl. Phys. 78, 4606–4709 (1995)
G. Callies, P. Berger, H. Hugel, Time-resolved observation of gas-dynamic discontinuities arising during excimer laser ablation and their interpretation. J. Phys. D 794–806 (1995)
Y. Zhang, D.Y. Tzou, J.K. Chen, Micro- and nanoscale heat transfer in femtosecond laser processing of metals. Comput. Phys. 1–45 (2015)
A. Okano, K. Takayanagi, Laser-induced fluorescene from collisionaly excited Si atoms in laser ablation plume. J. Appl. Phys. 86, 3964–3972 (1999)
X. Zeng, X. Mao, R. Greif, R.E. Russo, Ultraviolet femtosecond and nanosecond laser ablation of silicon: ablation efficiency and laser-induced plasma expansion. Proc SPIE 2004, 5448, 1150
C. Pasquini, J. Cortez, L.M.C. Silva, F.B. Gonzaga, Laser induced breakdown spectroscopy. J. Braz. Chem. Soc. 18(3), 463–512 (2007)
L.J. Radziemski, D.A. Cremers, Handbook of Laser Induced Breakdown Spectroscopy (Wiley, New York, NY, 2006)
G.M. Weyl, Laser-Induced Plasmas and Applications (Marcel Dekker, New York, NY, 1989)
C.A. Sacchi, Laser-induced electric breakdown in water. J. Opt. Soc. Am. B 8(2), 337–345 (1991)
M.S. Amer, M.A. El-Ashry et al., Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers. Appl. Surf. Sci. 242, 162–167 (2005)
A.T. Cheung, Dicing advanced materials for microelectronics. International Symposium on Advanced Packaging Materials: Processes, Properties, and Interfaces, 149–152, 2005
K.W. Shi, Y.B. Kar et al., Optimization of wafer singulation process on copper/low-k materials for semiconductor device assembly. Aust. J. Basic Appl. Sci. 8(22), 6–11 (2014)
T.J. Su, C.L. Chiu, Y.F. Chen et al., Improvement of wafer saw film burr issues. Int. J. Model. Optim. 5(5), 345–348 (2015)
Disco Corporation, The Cutting Edge: Technical Newsletter, no 5, 2002
I. Weisshaus, D. Shi, U. Efrat, Wafer dicing. Solid State Technology: Insight for Electronics Manufacturing
Z.Y. Zhang, F.W. Huo et al., Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material. Int. J. Mach. Tools Manuf. 51(1), 18–24 (2011)
Z.Y. Zhang, Y.Q. Wu et al., Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits. Scripta Mater 64(2), 177–180 (2011)
S. Malkin, C.S. Guo, Grinding Technology: Theory and Applications of Machining with Abrasives, 2nd edn. (Industrial Press, New York, 2008), pp. 54–79
H. Zhou, S. Qiu, Y. Huo, N. Zhang, High-speed dicing of silicon wafers conducted using ultrathin blades. Int. J. Adv. Manuf. Technol. 66, 947–953 (2013)
P.J. Kim, Y.D. Ha, H.H. Park, J.H. Park, Development of die-bonder with multi and matrix picker and placer to increase production capacity. Proceedings of the World Congress on Engineering and Computer Science, vol. 1 (2012), 978–988
Z. Liu, Reliable peeling of ultrathin die with multineedle ejector. IEEE Trans. Compon. Packag. Manuf. Technol. 4(9), 2156–3950 (2014)
T.H. Cheng, C.C. Du, C.H. Tseng, Study in IC chip failure during pick-up process by using experiemntal and finite element methods. J. Mater. Process. Technol. 172, 407–416 (2006)
N. Saiki, K. Inaba, K. Kishimoto, H. Seno, K. Ebe, Study on peeling behavior in pick-up process of IC chip with adhesive tape. J. Solid Mech. Mater. Eng. 4(7), 1051–1060 (2010)
Acknowledgments
The authors would like to acknowledge Dr. Sairam Agraharam of Intel Corp. for valuable discussions. The editors would like to thank Guotao Wang of Intel Corp. for his critical review of this Chapter.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2017 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Shi, H., Poonjolai, E. (2017). Fundamentals and Failures in Die Preparation for 3D Packaging. In: Li, Y., Goyal, D. (eds) 3D Microelectronic Packaging. Springer Series in Advanced Microelectronics, vol 57. Springer, Cham. https://doi.org/10.1007/978-3-319-44586-1_5
Download citation
DOI: https://doi.org/10.1007/978-3-319-44586-1_5
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-44584-7
Online ISBN: 978-3-319-44586-1
eBook Packages: EngineeringEngineering (R0)