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GaN-Based Nanowire Transistors

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Book cover Power GaN Devices

Part of the book series: Power Electronics and Power Systems ((PEPS))

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Abstract

The outstanding electronic properties of GaN semiconductors, such as large breakdown voltage, high critical electric field, high electron mobility and saturation velocity, high-temperature operation, make them an ideal material for power switches, converters, and RF power amplifiers.

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Author information

Authors and Affiliations

  1. Institute of Electrical Engineering, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

    Elison Matioli

  2. Cambridge Electronics Inc., Cambridge, MA, 02215, USA

    Bin Lu

  3. Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02139, USA

    Daniel Piedra & Tomás Palacios

Authors
  1. Elison Matioli
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  2. Bin Lu
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  3. Daniel Piedra
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  4. Tomás Palacios
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Corresponding author

Correspondence to Elison Matioli .

Editor information

Editors and Affiliations

  1. Dept of Information Engineering, University of Padova, Padova, Italy

    Matteo Meneghini

  2. Department of Information Engineering, University of Padova, Padova, Italy

    Gaudenzio Meneghesso

  3. Department of Information Engineering, University of Padova, Padova, Italy

    Enrico Zanoni

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Matioli, E., Lu, B., Piedra, D., Palacios, T. (2017). GaN-Based Nanowire Transistors. In: Meneghini, M., Meneghesso, G., Zanoni, E. (eds) Power GaN Devices. Power Electronics and Power Systems. Springer, Cham. https://doi.org/10.1007/978-3-319-43199-4_6

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  • DOI: https://doi.org/10.1007/978-3-319-43199-4_6

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  • Online ISBN: 978-3-319-43199-4

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