Abstract
High-voltage GaN is redefining power conversion , providing cost-competitive and easy-to-embed solutions that reduce costly energy loss by more than 50 %, shrink size and simplify the design and manufacturing of power supplies (for servers, telecom, industrial, gaming, and adapters), PV inverters, motor drives and EV/HEV inverters/converters. Transphorm has established the next power conversion platform—demonstrating breakthrough performance by introducing the world’s first 600 and 650 V GaN products with its EZ-GaN™ platform, using a cascode high-voltage GaN HEMT configuration. Following successful completion of JEDEC qualification as well as establishment of a high-voltage lifetime of >10 M hours, cascode high-voltage GaN HEMT on silicon switches is now a reality. The ability to produce large-area (6 in.) GaN-on-Si wafers and manufacture them in existing high-volume Si foundries has also made high-voltage GaN commercially attractive.
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Acknowledgments
The author would like to acknowledge Transphorm Inc. and its entire worldwide team, partners, investors and customers from inception till date for the exciting progress that has resulted in the first commercialization of the high-voltage GaN HEMT . Special acknowledgment to team members whose input and material has been incorporated in this chapter—Dr. Yifeng Wu (Circuits and Applications), Dr. Jim Honea (Diode-free Cascode Operation), Dr. Kurt Smith and Ron Barr (Reliability and Lifetime), Dr. Toshi Kikkawa (Manufacturing Results) and to Dr. Peter Smith for his help on detailed proofreading of this chapter.
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Parikh, P. (2017). Cascode Gallium Nitride HEMTs on Silicon: Structure, Performance, Manufacturing, and Reliability. In: Meneghini, M., Meneghesso, G., Zanoni, E. (eds) Power GaN Devices. Power Electronics and Power Systems. Springer, Cham. https://doi.org/10.1007/978-3-319-43199-4_10
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DOI: https://doi.org/10.1007/978-3-319-43199-4_10
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