Abstract
The chapter focuses on ultra-fast light sources for achieving small footprint and lower-power-consumption optical transceivers and covers various important light sources such as directly-modulated diode lasers with high optical-gain materials, low chirp externally-modulated diode lasers, and ultra-fast diode lasers with new structure and modulation scheme. The chapter starts with an in-depth theoretical treatment of key characteristics and dependences, illustrates typical realizations of ultra-fast diode lasers and integrated laser-modulators, and includes relevant operation and performance characteristics as well. In response to strong demand for datacom and access network applications selected variants of edge emitting transmitters are presented with particular emphasis on spectral and bandwidth efficiency.
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SFF-8431 specifications for enhanced 8.5 and 10 Gigabit small form factor pluggable module “SFP+”. Revision 2.1, 30 August 2007
H. Statz, G. de Mars, in Quantum Electronics, ed. by C.H. Townes (Columbia Univ. Press, New York, 1960), p. 530
M. Aoki, T.K. Sudo, T. Tsuchiya, D. Takemoto, S. Tsuji, 85 °C 10-Gbit/s operation of 1.3-μm InGaAlAs MQW-DFB laser, in Proc. 26th Europ. Conf. Opt. Commun. (ECOC’00), Munich, Germany (2000), vol. 1, pp. 123–124
M. Ishikawa, R. Nagarajan, T. Fukushima, J.G. Wasserbauer, J.E. Bowers, Long wavelength high-speed semiconductor lasers with carrier transport effects. IEEE J. Quantum Electron. 28, 2230–2241 (1992)
K. Uomi, T. Tsuchiya, H. Nakano, M. Aoki, M. Suzuki, N. Chinone, High-speed and ultralow-chirp 1.55 μm multiquantum well \(\lambda/4\)-shifted DFB lasers. IEEE J. Quantum Electron. 27, 1705–1713 (1991)
D. Marcuse, T.H. Wood, Time-dependent simulation of a laser-modulator combination. IEEE J. Quantum Electron. 30, 2743–2755 (1994)
D. Marcuse, T.H. Wood, Simulation of a laser modulator driven by NRZ pulses. J. Lightwave Technol. 14, 860–866 (1996)
P.J. Corvini, T.L. Koch, Computer simulation of high-bit-rate optical fiber transmission using single-frequency lasers. J. Lightwave Technol. LT-5, 1591–1595 (1987)
F. Koyama, Y. Suematsu, Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers. IEEE J. Quantum Electron. QE-21, 292–297 (1985)
H. Temkin, N.K. Dutta, T. Tanbun-Ek, R.A. Logan, A.M. Sergent, InGaAs/InP quantum well lasers with sub-mA threshold current. Appl. Phys. Lett. 57, 1610–1612 (1990)
P.J.A. Thijs, L.F. Tiemeijer, P.I. Kuindersma, J.J.M. Binsma, T. van Dongen, High-performance 1.5 μm InGaAs–InGaAsP strained quantum well lasers and amplifiers. IEEE J. Quantum Electron. 27, 1426–1439 (1991)
E. Zah, R. Bhat, F.J. Favire, S.G. Menocal, N.C. Andreakis, K.W. Cheung, D.D. Hwang, M.A. Koza, T.P. Lee, Low-threshold 1.5 μm compressive-strained multiple-and single-quantum-well lasers. IEEE J. Quantum Electron. 27, 1440–1450 (1991)
T. Namegaya, A. Kasukawa, N. Iwai, T. Kikuta, High temperature operation of 1.3 μm GaInAsP/InP GRINSCH strained-layer quantum well lasers. Electron. Lett. 29, 392–393 (1992)
J.S. Osinski, P. Grodzinski, Y. Zou, P.D. Dapkus, Z. Karim, A.R. Tanguay, Low threshold current 1.5 μm buried heterostructure lasers using strained quaternary quantum wells. IEEE Photonics Technol. Lett. 4, 1313–1315 (1992)
T. Tsuchiya, M. Komori, K. Uomi, A. Oka, T. Kawano, A. Oishi, Investigation of effect of strain on low-threshold 1.3 μm InGaAsP strained-layer quantum well lasers. Electron. Lett. 30, 788–789 (1994)
K. Kojima, O. Mizuhara, L.J.P. Ketelsen, I. Kim, R.B. Bylsma, 1.3-μm uncooled DFB lasers for 10 Gb/s transmission over 50 km of non-dispersion-shifted fiber, in Opt. Fiber Commun. Conf. (OFC’96), San Jose, CA, USA (1996), Techn. Digest, paper PDP11-2
R. Paoletti, M. Agresti, G. Burns, G. Berry, B. Bertone, P. Charles, P. Crump, A. Davies, R.Y. Fang, R. Ghin, P. Gotta, M. Holm, C. Kompocholis, G. Magnetti, J. Massa, G. Meneghini, G. Rossi, P. Ryder, A. Taylor, P. Valenti, M. Meliga, 100 °C 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications, in Proc. 27th Europ. Conf. Opt. Commun. (ECOC’01), Amsterdam, The Netherlands (2001), PD 84-85
G. Sakaino, Y. Hisa, K. Takagi, T. Aoyagi, T. Nishimura, E. Omura, Uncooled and directly modulated 1.3 μm DFB laser diode for serial 10 Gb/s Ethernet, in Proc. 26th Europ. Conf. Opt. Commun. (ECOC’00), Munich, Germany (2000), vol. 1, pp. 125–126
M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance. Jpn. J. Appl. Phys. 35, 1273–1275 (1996)
I. Suemune, Theoretical estimation of leakage current in II–VI heterostructure lasers. Jpn. J. Appl. Phys. 31, 95–98 (1992)
T. Kitatani, J. Kasai, K. Nakahara, K. Adachi, M. Aoki, High-performance GaInNAs long-wavelength lasers, in Conf. Indium Phosphide Relat. Mater. (IPRM’07), Matsue, Japan (2007), Techn. Digest, pp. 354–357
Y. Matsushima, K. Utaka, K. Sakai, Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in the 1.55 μm range. IEEE J. Quantum Electron. 25, 1376–1380 (1989)
C.E. Zah, R. Bhat, B.N. Pathak, F. Favire, W. Lin, M.C. Wang, N.C. Andreadakis, D.M. Hwang, M.A. Koza, T.P. Lee, Z. Wang, D. Darby, D. Flanders, J.J. Hsieh, High-performance uncooled 1.3-μm AlxGayIn1 − x − yAs/InP strained layer quantum-well lasers for subscriber loop applications. IEEE J. Quantum Electron. 30, 511–522 (1994)
T.K. Sudoh, D. Takemoto, T. Tsuchiya, M. Aoki, S. Tsuji, Highly reliable 1.3-μm InGaAlAs MQW DFB lasers, in 17th IEEE Internat. Semicond. Laser Conf. (ISLC’00), Monterey, CA, USA (2000), Conf. Digest, paper TuB6
T. Takiguchi, Y. Hanamaki, T. Kadowaki, T. Tanaka, C. Watatani, M. Takemi, Y. Mihashi, E. Omura, 1.3 μm uncooled AlGaInAs-MQW DFB laser with \(\lambda/4\)-shifted Grating, in Opt. Fiber Commun. Conf. (OFC’02), Anaheim, CA, USA, 2002. Techn. Digest (2002), paper ThF3
K. Nakahara, T. Tsuchiya, S. Tanaka, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, E. Nomoto, S. Fujisaki, M. Kudo, M. Sawada, T. Yuasa, M. Mukaikubo, 115 °C, 12.5-Gb/s direct modulation of 1.3-μm InGaAlAs-MQW RWG DFB laser with notch-free grating structure for datacom applications, in Opt. Fiber Commun. Conf. (OFC’03), Atlanta, GA, USA (2003), Techn. Digest, paper PD-40
K. Nakahara, T. Tsuchiya, T. Kitatani, K. Shinoda, T. Kikawa, F. Hamano, S. Fujisaki, T. Taniguchi, E. Nomoto, M. Sawada, T. Yuasa, 12.5-Gb/s direct modulation up to 115 °C in 1.3-μm InGaAlAs-MQW RWG DFB lasers with notch-free grating structure. J. Lightwave Technol. 25, 159–165 (2004)
S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, K. Takagi, T. Aoyagi, E. Omura, N. Tomita, 120 °C uncooled operation of direct modulated 1.3-μm AlGaInAs-MQW DFB laser diodes for 10-Gb/s telecom applications, in Opt. Fiber Commun. Conf. (OFC’04), Los Angeles, CA, USA (2004), Techn. Digest, paper ThD2
Y. Muroya, T. Okuda, R. Kobayashi, K. Tsuruoka, Y. Ohsawa, T. Koui, T. Tsukuda, T. Nakamura, K. Kobayashi, 100 °C, 10-Gb/s direct modulation with a low operation current of 1.3-μm AlGaInAs buried heterostructure DFB laser diodes, in Opt. Fiber Commun. Conf. (OFC’03), Atlanta, GA, USA (2003), Techn. Digest, paper FG6
P.M. Ilroy, A. Kurobe, Y. Uematsu, Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers. IEEE J. Quantum Electron. QE-21, 1958–1963 (1985)
K. Nakahara, T. Tsuchiya, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, M. Aoki, 40-Gb/s direct modulation in 1.3-μm InGaAlAs-MQW RWG DFB lasers, in Conf. Lasers Electro-Opt. (CLEO’07)/Pacific Rim, Seoul, South Korea (2007), OSA Techn. Digest, paper ThA3_2
T. Tadokoro, W. Kobayashi, T. Fujisawa, T. Yamanaka, F. Kano, High-speed modulation lasers for 100GbE applications, in Opt. Fiber Commun. Conf. and Nat. Fiber Opt. Eng. Conf. (OFC/NFOEC’11), Los Angeles, CA, USA (2011), Techn. Digest, paper OWD1
T. Simoyama, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, 40-Gbps transmission using direct modulation of 1.3-μm AlGaInAs MQW distributed-reflector lasers up to 70 °C, in Opt. Fiber Commun. Conf. and Nat. Fiber Opt. Eng. Conf. (OFC/NFOEC’11), Los Angeles, CA, USA (2011), Techn. Digest, paper OWD3
Optical amplifiers, J. Lightwave Technol. 9, 145–296 (1991) (Special Issue)
T.H. Wood, Multiple quantum well waveguide modulators. J. Lightwave Technol. 6, 743–757 (1988)
K. Wakita, I. Kotaka, O. Mitomi, H. Asai, Y. Kawamura, M. Naganuma, High-speed InGaAs/lnAIAs multiple quantum well optical modulators with bandwidths in excess of 40 GHz at 1.55 μm, in Conf. Lasers Electro-Opt. (CLEO’90), Baltimore, MD (1990), Techn. Digest, paper CtuC6
H. Sano, H. Inoue, H. Nakamura, K. Ishida, J.M. Glinski, Low loss single-mode InGaAs/InAIAs multiquantum well electroabsorption modulator, in Opt. Fiber Commun. Conf. (OFC’90), San Francisco, CA, USA (1990), Techn. Digest, paper WM15
U. Koren, B.I. Miller, T.L. Koch, G. Eisenstein, R.S. Tucker, I. Bar-Joseph, D.S. Chemla, Low-loss InGaAs/InP MQW optical electroabsorption waveguide modulator. Appl. Phys. Lett. 51, 1132–1134 (1987)
F. Devaux, E. Bigan, B. Rose, M. Mckee, F. Huet, M. Carré, High-speed, InGaAsP/InP multiple quantum 1.55 μm single mode modulator. Electron. Lett. 27, 1926–1927 (1991)
F. Devaux, E. Bigan, A. Ougazzaden, B. Pierre, F. Huet, M. Carré, A. Carenco, InGaAsP/InGaAsP multiple quantum well modulator with improved saturation intensity and bandwidth over 20-GHz. IEEE Photonics Technol. Lett. 4, 720–722 (1992)
H. Sano, H. Inoue, S. Tsuji, K. Ishida, InGaAs/InAlAs MQW Mach-Zehnder optical modulator for 10-Gbit/s long-haul transmission systems, in Opt. Fiber Commun. Conf. (OFC’92), San Jose, CA, USA (1992), Techn. Digest, paper ThG4
J.E. Zucker, K.L. Jones, B.I. Miller, M.G. Young, U. Koren, B. Tell, K. Brown-Goebeler, Interferometric quantum well modulators with gain. J. Lightwave Technol. 10, 924–932 (1992)
D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood, C.A. Burrus, Electric field dependence of optical absorption near the band gap of quantum well structures. Phys. Rev. B 32, 1043–1060 (1985)
K. Wakita, Y. Kawamura, Y. Yoshikuni, H. Asahi, Electroabsorption on room-temperature excitons in InGaAs/InGaAIAs multiple quantum-well structures. Electron. Lett. 21, 338–340 (1985)
Y. Kawamura, K. Wakita, Y. Yoshikuni, Y. Itaya, H. Asahi, Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5-μm wavelength range. IEEE J. Quantum Electron. 27, 915–918 (1991)
H. Soda, K. Sato, H. Sudo, S. Takeuchi, H. Ishikawa, Ultralow-chirp characteristics of monolithic electroabsorption modulator/DFB laser light source, in Proc. 17th Europ. Conf. Opt. Commun. (ECOC’91), Paris, France (1991), paper WeB7-1
T. Kato, T. Sasaki, N. Kida, K. Komatsu, I. Mito, Novel MQW DFB laser diode modulator integrated light source using bandgap energy control epitaxial growth technique, in Proc. 17th Europ. Conf. Opt. Commun. (ECOC’91), Paris, France (1991), paper WeB7-2
M. Aoki, H. Sano, M. Suzuki, M. Takahashi, K. Uomi, A. Takai, Novel structure MQW electroabsorption-modulator/DFB-laser-integrated device fabricated by selective area MOCVD growth. Electron. Lett. 27, 2138–2140 (1991)
M. Suzuki, H. Tanaka, H. Taga, S. Yamamoto, Y. Matsushima, \(\lambda/4\)-Shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission. J. Lightwave Technol. 10, 90–94 (1992)
K. Wakita, I. Kotaka, H. Asai, M. Okamoto, Y. Kondo, M. Naganuma, High-speed and low-drive-voltage monolithic multiple quantum well modulator/DFB laser light source. IEEE Photonics Technol. Lett. 4, 16–18 (1992)
U. Koren, B. Glance, B.I. Miller, M.G. Young, M. Chien, T.H. Wood, L.M. Ostar, T.L. Koch, R.M. Jopson, J.D. Evankow, G. Raybon, C.A. Bums, P.D. Magill, K.C. Reichmann, Widely tunable distributed Bragg reflector laser with an integrated electroabsorption modulator, in Opt. Fiber Commun. Conf. (OFC’92), San Jose, CA, USA (1992), Techn. Digest, paper WG5
M. Aoki, N. Kikuchi, K. Sekine, S. Sasaki, M. Suzuki, T. Taniwatari, Y. Okuno, T. Kawano, A. Takai, Low-drive-voltage and low-chirp integrated electroabsorption modulator/DFB-laser for 2.5 Gbit/s 200-km normal fiber transmission. Electron. Lett. 29, 1983–1984 (1993)
K.C. Reichmann, P.D. Magill, G. Raybon, Y.K. Chen, T. Tanbun-Ek, R.A. Logan, A. Tate, A.M. Sergent, K.W. Wecht, P.F. Sciortino Jr., Long-distance transmission experiment at 2.5 Gbit/s using an integrated laser/modulator grown by selective-area MOVPE, in Opt. Fiber Commun. Conf. (OFC’94), San Jose, CA, USA (1994), Techn. Digest, paper ThM-4
K. Komatsu, T. Kato, M. Yamaguchi, T. Sasaki, S. Takano, H. Shimizu, N. Watanabe, M. Kitamura, DFB-LD/modulator integrated light sources fabricated by band-gap-energy-controlled selective MOVPE with stable fiber transmission characteristics, in Opt. Fiber Commun. Conf. (OFC’94), San Jose, CA, USA (1994), Techn. Digest, paper TuC-3
B. Clesca, S. Gauchard, V. Rodrigues, D. Lesterlin, E. Kuhn, A. Bodere, H. Haisch, K. Satzke, J.F. Vinchant, 2.5 Gbit/s, 1291-km transmission over nondispersion-shifted fiber using an integrated electroabsorption modulator/DFB laser module, in Proc. 21st Europ. Conf. Opt. Commun. (ECOC’95), Brussels, Belgium (1995), paper Th.A.3.8
K. Wakita, I. Kotaka, O. Mitomi, H. Asai, Y. Kawamura, M. Naganuma, High-speed InGaAlAs/InAlAs multiple quantum well optical modulators. J. Lightwave Technol. 8, 1027–1032 (1990)
A.M. Fox, D.A.B. Miller, G. Livescu, J.E. Cunningham, J.E. Henry, W.Y. Jan, Quantum well carrier sweep out: relation to electroabsorption and exiton saturation. IEEE J. Quantum Electron. 27, 2281–2295 (1991)
T.H. Wood, T.Y. Chang, J.Z. Pastalan, C.A. Burrus Jr., N.J. Sauer, B.C. Johnson, Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers. Electron. Lett. 27, 257–259 (1991)
T. Ido, H. Sano, S. Tanaka, H. Inoue, Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulators. IEEE Photonics Technol. Lett. 7, 1421–1423 (1995)
D. Marcuse, DFB laser with attached external intensity modulator. IEEE J. Quantum Electron. 26, 262–269 (1990)
Y. Kotaki, H. Soda, Analysis of static and dynamic wavelength shifts in modulator-integrated DFB lasers, in Proc. 19th Europ. Conf. Opt. Commun. (ECOC’93), Montreux, Switzerland (1993), paper WeP8.6
M. Aoki, S. Takashima, Y. Fujiwara, S. Aoki, New transmission simulation of EA-modulator integrated DFB-lasers considering the facet reflection-induced chirp. IEEE Photonics Technol. Lett. 9, 380–382 (1997)
R. Adams, Band-structure engineering for low-threshold high-efficiency semiconductor lasers. Electron. Lett. 22, 249–250 (1986)
E. Yablonovitch, E.O. Kane, Reduction of lasing threshold current density by the lowering of valence band effective mass. J. Lightwave Technol. LT-4, 504–506 (1986)
T. Ohtoshi, N. Chinone, Linewidth enhancement factor in strained quantum well lasers. IEEE Photonics Technol. Lett. 1, 117–119 (1989)
K. Kamite, H. Sudo, M. Yano, H. Ishikawa, H. Imai, Ultra-high-speed InGaAsP/InP DFB lasers emitted at 1.3 μm wavelength. IEEE J. Quantum Electron. QE-23, 1054–1058 (1987)
P.J. Corvini, T.L. Koch, Computer simulation of high-bit-rate optical fiber transmission using single-frequency lasers. J. Lightwave Technol. LT-5, 1591–1595 (1987)
K. Uomi, A. Murata, S. Sano, R. Takeyari, A. Takai, Advantages of 1.55 μm InGaAs/InGaAsP MQW-DFB lasers for 2.5 Gbit/s long-span normal fiber transmission. IEEE Photonics Technol. Lett. 4, 657–660 (1992)
M. Aoki, Monolithically-integrated laser diodes for optical telecommunications by selective area growth technologies. Ph.D. Dissertation, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan (1999)
N. Sasada, K. Naoe, Y. Sakuma, K. Motoda, T. Kato, M. Akashi, J. Shimizu, T. Kitatani, M. Aoki, M. Okayasu, K. Uomi, 1.55-μm 40-Gbit/s electro-absorption modulator integrated DFB laser modules for very short reach transmission, in 10th OptoElectronics Commun. Conf. (OECC’05), Seoul, Korea (2005), Techn. Digest, paper 6F2-1
K. Naoe, N. Sasada, Y. Sakuma, K. Motoda, T. Kato, M. Akashi, J. Shimizu, T. Kitatani, M. Aoki, M. Okayasu, K. Uomi, 43-Gbit/s operation of 1.55-μm electro-absorption modulator integrated DFB laser modules for 2-km transmission, in Proc. 31st Europ. Conf. Opt. Commun. (ECOC’05), Glasgow, UK (2005), paper Th 2.6.4
T. Fujisawa, K. Tahahat, W. Kobayashoi, T. Tadokoro, N. Fujiwara, S. Kanazawa, F. Kano, 1.3-μm, 50-Gbit/s EADFB lasers for 400GbE, in Opt. Fiber Commun. Conf. and Nat. Fiber Opt. Eng. Conf. (OFC/NFOEC’11), Los Angeles, CA, USA (2011), Techn. Digest, paper OWD4
C. Kazmierski, A. Konczykowska, F. Jorge, F. Blache, M. Riet, C. Jany, A. Scavennec, 100 Gb/s operation of an AlGaInAs semi-insulating buried heterojunction EML, in Opt. Fiber Commun. Conf. and Nat. Fiber Opt. Eng. Conf. (OFC/NFOEC’09), San Diego, CA, USA (2009), Techn. Digest, paper OThT7
H. Tanaka, M. Horita, Y. Matsushima, Temperature dependence of InGaAsP electro-absorption modulator module, in Conf. Indium Phosphide Relat. Mater. (IPRM’95), Hokkaido, Japan (1995), Techn. Digest, paper ThP45
B. Clesca, S. Gauchard, E. Lantoine, V. Rodrigues, F. Giraud, D. Lesterlin, 3.2 nm wavelength tuning via temperature control for integrated electroabsorption modulator/DFB laser with high tolerance to chromatic dispersion. Electron. Lett. 32, 927–929 (1996)
M.R. Gokhale, P.V. Studenkov, J. Ueng-McHale, J. Thomson, J. Yao, J. van Saders, Uncooled, 10 Gb/s 1310 nm electroabsorption modulated laser, in Opt. Fiber Commun. Conf. (OFC’03), Atlanta, GA, USA (2003), Techn. Digest, paper PDP-42
S. Makino, K. Shinoda, T. Kitatani, T. Tsuchiya, M. Aoki, Wide temperature range (0 to 85 °C), 40-km SMF transmission of a 1.55 μm, 10-Gbit/s InGaAlAs electroabsorption modulator integrated DFB laser, in Opt. Fiber Commun. Conf. (OFC’05), Anaheim, CA, USA (2005), Techn. Digest, paper PDP-14
S. Makino, K. Shinoda, T. Shiota, T. Kitatani, T. Fukamachi, M. Aoki, N. Sasada, K. Naoe, K. Uchida, H. Inoue, Wide temperature (15 °C to 95 °C), 80-km SMF transmission of a 1.55-μm, 10-Gbit/s InGaAlAs electroabsorption modulator integrated DFB laser, in Opt. Fiber Commun. Conf. and Nat. Fiber Opt. Eng. Conf. (OFC/NFOEC’07), Anaheim, CA, USA (2007), Techn. Digest, paper OMS-1
N. Sasada, K. Naoe, Y. Sakuma, K. Okamoto, R. Washino, D. Nakai, K. Motoda, S. Makino, M. Aoki, Un-cooled operation (10 °C to 85 °C) of a 10.7-Gbit/s 1.55-μm electro-absorption modulator integrated DFB laser for 40-km transmission, in Opt. Fiber Commun. Conf. and Nat. Fiber Opt. Eng. Conf. (OFC/NFOEC’07), Anaheim, CA, USA (2007), Techn. Digest, paper We8.1.5
H. Hayashi, S. Makino, T. Kitatani, T. Shiota, K. Shinoda, S. Tanaka, M. Aoki, N. Sasada, K. Naoe, A first uncooled (25 to 85 °C) 43-Gbps light source based on InGaAlAs EA/DFB laser technology, in Proc. 34th Europ. Conf. Opt. Commun. (ECOC’08), Brussels, Belgium (2008), paper We.3.C.3
S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, M. Aoki, N. Sasada, K. Naoe, High-speed electroabsorption modulator integrated DFB laser for 40 Gbps and 100 Gbps application, in Conf. Indium Phosphide Relat. Mater. (IPRM’09), Newport Beach, CA, USA (2009), Techn. Digest, paper ThB1.1
T. Fujisawa, S. Kanazawa, N. Nunoya, H. Ishii, Y. Kawaguchi, A. Ohki, H. Fujiwara, K. Takahat, R. Iga, F. Kano, H. Oohashi, 4 × 25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet, in Proc. 36th Europ. Conf. Opt. Commun. (ECOC’10), Turino, Italy (2010), paper Th.9.D.1
K. Iga, Modulation limit of semiconductor lasers by some parametric modulation scheme. Trans. Inst. Electron. Commun. Eng. Jpn. E-68, 417–420 (1985)
R. Lang, Injection locking properties of a semiconductor-laser. IEEE J. Quantum Electron. QE-18, 976–983 (1982)
A. Tager, K. Petermann, High-frequency oscillations and self-mode locking in short external-cavity laser diodes. IEEE J. Quantum Electron. 30, 1553–1561 (1994)
P. Even, K.A. Ameur, G.M. Stephan, Modeling of an injected gas laser. Phys. Rev. A 55, 1441–1453 (1997)
E.G. Lariontsev, I. Zolotoverkh, P. Besnard, G.M. Stephan, Injection locking properties of a microchip laser. Eur. Phys. J. D 5, 107–117 (1999)
X.J. Meng, T. Chau, M.C. Wu, Improved intrinsic dynamic distortions in directly modulated semiconductor lasers by optical injection locking. IEEE Trans. Microw. Theory Tech. 47, 1172–1176 (1999)
L. Chrostowski, X. Zhao, C.J. Chang-Hasnain, R. Shau, M. Ortsiefer, M.-C. Amann, 50 GHz optically injection-locked 1.55-μm VCSELs. IEEE Photonics Technol. Lett. 18, 367–369 (2006)
T. Sogawa, Y. Arakawa, M. Tanaka, H. Sakaki, Observation of a short optical pulse (<1.3 ps) from a gain switched quantum well laser. Appl. Phys. Lett. 53, 1580–1582 (1988)
D. Bimberg, K. Ketterer, E.H. Böttcher, E. Scholl, Gain modulation of unbiased semiconductor lasers: ultrashort light-pulse generation in the 0.8 μm–1.3 μm wavelength range. Int. J. Electron. 60, 23–45 (1986)
H.F. Liu, M. Fukazawa, Y. Kawai, T. Kamiya, Gain-switched picosecond pulse (<10 ps) generation from 1.3 μm laser diodes. IEEE J. Quantum Electron. 25, 1417–1425 (1989)
O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, B. Stalnacke, L. Backborn, 30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm. Electron. Lett. 33, 488–489 (1997)
L. Bach, W. Kaiser, J.P. Reithmaier, A. Forchel, T.W. Berg, B. Tromborg, Enhanced direct-modulated bandwidth of 37 GHz by a multi-section laser with a coupled cavity-injection-grating design. Electron. Lett. 39, 1592–1593 (2003)
J.P. Reithmaier, W. Kaiser, L. Bach, A. Forchel, M. Gioannini, I. Montroset, T.W. Berg, B. Tromborg, Modulation speed enhancement by coupling to higher order resonances: A road towards 40 GHz bandwidth lasers on InP, in Conf. Indium Phosphide Relat. Mater. (IPRM’05), Glasgow, UK (2005), Techn. Digest, paper 05CH37633C
S. Bauer, O. Brox, M. Biletzke, J. Kreissl, M. Radziunas, B. Sartorius, H.J. Wünsche, Speed potential of active feedback lasers, in Conf. Lasers Electro-Opt. (CLEO’03), Europe (2003), OSA Techn. Digest, p. 176
B. Sartorius, M. Möhrle, Mirror modulated lasers: a concept for high speed transmitters. Electron. Lett. 32, 1781–1782 (1996)
M. Radziunas, A. Glitzky, U. Bandelow, M. Wolfram, U. Troppenz, J. Kreissl, W. Rehbein, Improving the modulation bandwidth in semiconductor lasers by passive feedback. IEEE J. Sel. Top. Quantum Electron. 13, 136–142 (2007)
U. Troppenz, J. Kreissl, W. Rehbein, C. Bornholdt, T. Gaertner, M. Radziunas, A. Glitzky, U. Bandelow, M. Wolfram, 40 Gb/s directly modulated InGaAsP passive feedback DFB laser, in Proc. 32nd Europ. Conf. Opt. Commun. (ECOC’06), Cannes, France (2006), paper Th4.5.5
U. Troppenz, J. Kreissl, M. Möhrle, C. Bornholdt, W. Rehbein, B. Sartorius, I. Woods, M. Schell, 40 Gbit/s directly modulated lasers: physics and application. Proc. SPIE 79530, 79530F1 (2011). doi:10.1117/12.876137
Y. Matsui, T. Pham, W.A. Ling, R. Schatz, G. Carey, H. Daghighian, T. Sudo, C. Roxlo, 55-GHz bandwidth short-cavity distributed reflector laser and its application to 112-Gb/s PAM-4, in Opt. Fiber Commun. Conf. (OFC’16), Anaheim, CA, USA (2016), Techn. Digest, paper Th5B.4
Y.-J. Chiu, H.-F. Chou, V. Kaman, P. Abraham, J.E. Bowers, High extinction ratio and saturation power traveling-wave electroabsorption modulator. IEEE Photonics Technol. Lett. 14, 792–794 (2002)
Y. Akage, K. Kawano, S. Oku, R. Iga, H. Okamoto, Y. Miyamoto, H. Takeuchi, Wide bandwidth of over 50 GHz traveling wave electrode electroabsorption modulator integrated DFB lasers. Electron. Lett. 37, 299–300 (2001)
R. Lewén, S. Irmscher, U. Westergren, L. Thylén, U. Eriksson, Segmented transmission-line electroabsorption modulators. J. Lightwave Technol. LT-2, 172–179 (2002)
M. Shirai, H. Arimoto, K. Watanbe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, M. Okayasu, 40 Gbit/s electroabsorption modulators with impedance controlled electrodes. Electron. Lett. 39, 734–735 (2003)
R.G. Walker, High-speed semiconductor intensity modulators. IEEE J. Quantum Electron. QE-7, 654–667 (1991)
S.R. Sakamoto, A. Jackson, N. Dagli, Substrate removed GaAs/AlGaAs Mach-Zehnder electro-optic modulators for ultra wide bandwidth operation, in Internat. Top. Meeting Microw. Photon. (1999), pp. 13–16
L. Mörl, D. Hoffmann, K. Matzen, C. Bornholdt, G.G. Mekonnen, F. Reier, Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP, in Conf. Indium Phosphide Relat. Mater. (IPRM’99), Davos, Switzerland (1999), Techn. Digest, paper WeA1-3
S. Akiyama, S. Hirose, T. Watanabe, M. Ueda, S. Sekiguchi, N. Morii, T. Yamamoto, A. Kuramata, H. Soda, Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source, in 18th IEEE Internat. Semicond. Laser Conf. (ISLC’02), Garmisch-Partenkirchen, Germany (2002), Conf. Digest, paper TuC1
K. Tsuzuki, H. Shibata, N. Kikuchi, M. Ishikawa, T. Yasui, H. Ishii, H. Yasaka, 10-Gbit/s, 200 km duobinary SMF transmission using a full C-band tunable DFB laser array co-packaged with InP Mach-Zehnder modulator, in 21st IEEE Int. Semicond. Laser Conf. (ISLC’08), Sorrento, Italy (2008), Conf. Digest, paper MB6
F. Koyama, K. Iga, Frequency chirping in external modulators. J. Lightwave Technol. 6(1), 87–93 (1988)
J. Kreissl, V. Vercesi, U. Troppenz, T. Gaertner, W. Wenisch, M. Schell, Up to 40 Gb/s directly modulated laser operating at low driving current: buried-heterostructure passive feedback laser (BH-PFL). IEEE Photonics Technol. Lett. 24, 362–364 (2012)
S. Karar, Y. Gao, K.P. Zhong, J.H. Ke, J.C. Cartledge, Generation of DPSK signals using a directly modulated passive feedback laser, in Proc. 38th Europ. Conf. Opt. Commun. (ECOC’12), Amsterdam, The Netherlands (2012), paper Tu.4.A.1
D. Mahgerefteh, Y. Matsui, C. Liao, B. Johnson, D. Walker, X. Zheng, Z.F. Fan, K. McCallion, P. Tayebati, Error-free 250 km transmission in standard fibre using compact 10 Gbit/s chirp-managed directly modulated lasers (CML) at 1550 nm. Electron. Lett. 41(9), 543–544 (2005)
D. Mahgerefteh, Y. Matsui, X. Zheng, K. McCallion, Chirp managed laser and applications. IEEE J. Sel. Top. Quantum Electron. 16(5), 1126–1139 (2010)
A. Shen, G. Levaufre, A. Accard, J. Decobert, N. Lagay, J.-G. Provost, D. Make, G.-H. Duan, 50 km error free transmission of fully integrated chirp-managed 10 Gb/s directly modulated C-band tunable III–V/SOI hybrid lasers, in Opt. Fiber Commun. Conf. (OFC’16), Anaheim, CA, USA (2016), Techn. Digest, paper M2C.5
W. Jia, J. Xu, Z. Liu, K.-H. Tse, C.-K. Chan, Generation and transmission of 10-Gb/s RZ-DPSK signals using a directly modulated chirp-managed laser. IEEE Photonics Technol. Lett. 23(3), 173–175 (2011)
W. Jia, Y. Matsui, D. Mahgerefteh, I. Lyubomirsky, C.-K. Chan, Generation and transmission of 10-Gbaud optical 3/4-RZ-DQPSK signals using a chirp-managed DBR laser. J. Lightwave Technol. 30(21), 3299–3305 (2012)
W. Kobayashi, M. Arai, T. Fujisawa, T. Sato, T. Ito, K. Hasebe, S. Kanazawa, Y. Ueda, T. Yamanaka, H. Sanjoh, Novel approach for chirp and output power compensation applied to a 40-Gbit/s EADFB laser integrated with a short SOA. Opt. Express 23(7), 9533–9542 (2015)
M. Theurer, G. Przyrembel, A. Sigmund, W.-D. Molzow, U. Troppenz, M. Möhrle, 56 Gb/s L-band InGaAlAs RW electroabsorption modulated laser with integrated SOA. Phys. Status Solidi A 213(4), 970–974 (2016)
D. Erasme, T. Anfray, M.E. Chaibi, K. Kechaou, J. Petit, G. Aubin, K. Merghem, C. Kazmierski, J.-G. Provost, P. Chanclou, C. Aupetit-Berthelemot, The dual-electroabsorption modulated laser, a flexible solution for amplified and dispersion uncompensated networks over standard fiber. J. Lightwave Technol. 32(21), 4068–4078 (2014)
https://standards.ieee.org/findstds/standard/802.3ba-2010.html
M. Matsuda, A. Uetake, T. Simoyama, S. Okumura, K. Takabayashi, M. Ekawa, T. Yamamoto, Simultaneous 40-Gbps direct modulation of 1.3-μm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate, in Conf. Indium Phosphide Relat. Mater. (IPRM’13), Kobe, Japan (2013), Techn Digest, paper TuD2-2
M. Matsuda, A. Uetake, T. Simoyama, S. Okumura, K. Takabayashi, M. Ekawa, T. Yamamoto, High-speed directly modulated distributed-reflector lasers, in 24th IEEE Int. Semicond. Laser Conf. (ISLC’14), Palma de Mallorca, Spain (2014), Conf. Digest, paper TUA.01
N. Nakamura, M. Shimada, G. Sakaino, T. Nagira, H. Yamaguchi, Y. Okunuki, A. Sugitatsu, M. Takemi, 25.8 Gbps direct modulation AlGaInAs DFB lasers of low power consumption and wide temperature range operation for data center, in Opt. Fiber Commun. Conf. (OFC’15), Los Angeles, CA, USA (2015), Techn. Digest, paper W2A.53
K. Nakahara, Y. Wakayama, T. Kitatani, T. Taniguchi, T. Fukamachi, Y. Sakuma, S. Tanaka, Direct modulation at 56 and 50 Gb/s of 1.3 μm InGaAlAs ridge-shaped-BH DFB lasers. IEEE Photonics Technol. Lett. 27(5), 534–536 (2015)
Y. Matsui, T. Pham, T. Sudo, G. Carey, B. Young, 112-Gb/s WDM link using two directly modulated Al-MQW BH DFB lasers at 56 Gb/s, in Opt. Fiber Commun. Conf. (OFC’15), Los Angeles, CA, USA (2015), Techn. Digest, paper Th5B.6
M. Moehrle, H. Klein, C. Bornholdt, G. Przyrembel, A. Sigmund, W.-D. Molzow, U. Troppenz, H.-G. Bach, InGaAlAs RW-based electro-absorption-modulated DFB-lasers for high speed applications, in Semicond. Lasers Laser Dynam. VI, Brussels, Belgium. Proc. SPIE, vol. 9134 (2014), pp. 913419–913428. doi:10.1117/12.2053772
H. Klein, C. Bornholdt, G. Przyrembel, A. Sigmund, W.-D. Molzow, H.-G. Bach, M. Moehrle, 56 Gbit/s InGaAlAs-MQW 1300 nm electroabsorption-modulated DFB-lasers with impedance matching circuit, in Proc. 39th Europ. Conf. Opt. Commun. (ECOC’13), London, UK (2013), paper Th.1.B.5
T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, F. Kano, 1.3-μm, 50-Gbit/s EADFB lasers for 400 GbE, in Opt. Fiber Commun. Conf. and Nat. Fiber Opt. Eng. Conf. (OFC/NFOEC’11), Los Angeles, CA, USA (2011), Techn. Digest, paper OWD4
S. Kanazawa, T. Fujisawa, N. Nunoya, A. Ohki, K. Takahata, H. Sanjoh, R. Iga, H. Ishii, Ultra-compact 100 GbE transmitter optical sub-assembly for 40-km SMF transmission. J. Lightwave Technol. 31, 602–608 (2015)
S. Kanazawa, T. Fujisawa, K. Takahata, H. Sanjoh, R. Iga, Y. Ueda, W. Kobayashi, H. Ishii, 400-Gb/s operation of flip-chip interconnection EADFB laser array module, in Opt. Fiber Commun. Conf. (OFC’15), Los Angeles, CA, USA (2015), Techn. Digest, paper T3I.1
B. Teipen, Considerations on baud rate and lane number for 400 Gigabit Ethernet optical interfaces. IEEE 802.3bs 400 Gb/s Ethernet Task Force, Interim Meeting, May 2014. http://www.ieee802.org/3/bs/public/14_05/teipen_3bs_01a_0514.pdf
T. Tanaka, T. Takahara, J.C. Rasmussen, Discrete multi-tone technology for 100G Ethernet (100GbE). IEEE P802.3bm 40 Gb/s and 100 Gb/s Fiber Optic Task Force, Interim Meeting, September 2012. http://www.ieee802.org/3/bm/public/sep12/tanaka_01_0912_optx.pdf
J. Lee, P. Dong, N. Kaneda, Y.-K. Chen, Discrete multi-tone transmission for short-reach optical connections, in Opt. Fiber Commun. Conf. (OFC’16), Anaheim, CA, USA (2016), Techn. Digest, paper Th1G.1
T. Takahara, T. Tanaka, M. Nishihara, Z. Tao, L. Li, J.C. Rasmussen, Can discrete multi-tone reduce the cost for short reach systems? in Opt. Fiber Commun. Conf. (OFC’15), Los Angeles, CA, USA (2015), Techn. Digest, paper W4H.5
T. Takahara, T. Tanaka, M. Nishihara, Y. Kai, L. Li, Z. Tao, J.C. Rasmussen, Discrete multi-tone for 100 Gb/s optical access networks, in Opt. Fiber Commun. Conf. (OFC’14), San Francisco, CA, USA (2014), Techn. Digest, paper M2I.1
S. Bhoja, F. Chang, PAM modulation for 400G SMF. IEEE P802.3bm 400 Gb/s Ethernet Task Force, Interim Meeting, May 2014. http://www.ieee802.org/3/bs/public/14_05/bhoja_3bs_01_0514.pdf
W. Kobayashi, T. Fujisawa, S. Kanazawa, H. Sanjoh, 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km SMF transmission with 1.3 μm InGaAlAs-based DML. Electron. Lett. 50(4), 299–300 (2014)
U. Troppenz, M. Narodovitch, C. Kottke, G. Przyrembel, W.-D. Molzow, A. Sigmund, H.-G. Bach, M. Moehrle, 1.3 μm electroabsorption modulated lasers for PAM4/PAM8 single channel 100 Gb/s, in Conf. Indium Phosphide Relat. Mater. (IPRM’14), Montpellier, France (2014), Techn. Digest, paper Th-B2-5
S. Kanazawa, T. Fujisawa, K. Takahata, T. Ito, Y. Ueda, W. Kobayashi, H. Ishii, H. Sanjoh, Flip-chip interconnection lumped-electrode EADFB laser for 100-Gb/s/\(\lambda\) transmitter. IEEE Photonics Technol. Lett. 27(16), 1699–1701 (2015)
C. Caillaud, M.A. Mestre Adrover, F. Blache, F. Pommereau, J. Decobert, F. Jorge, P. Charbonnier, A. Konczykowska, J.-Y. Dupuy, H. Mardoyan, K. Mekhazni, J.-F. Paret, M. Faugeron, F. Mallecot, M. Achouche, Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission, in Proc. 41st Europ. Conf. Opt. Commun. (ECOC’15), Valencia, Spain (2015), paper PDP.1.5
S. Kanazawa, T. Fujisawa, K. Takahata, Y. Nakanishi, H. Yamazaki, Y. Ueda, W. Kobayashi, Y. Muramoto, H. Ishii, H. Sanjoh, 56-Gbaud 4-PAM (112-Gbit/s) operation of flip-chip interconnection lumped-electrode EADFB laser module for equalizer-free transmission, in Opt. Fiber Commun. Conf. (OFC’16), Anaheim, CA, USA (2016), Techn. Digest, paper W4J.1
S. Kanazawa, H. Yamazaki, Y. Nakanishi, T. Fujisawa, K. Takahata, Y. Ueda, W. Kobayashi, Y. Muramoto, H. Ishii, H. Sanjoh, Transmission of 214-Gbit/s 4-PAM signal using an ultrabroadband lumped-electrode EADFB laser module, in Opt. Fiber Commun. Conf. (OFC’16), Anaheim, CA, USA (2016), Techn. Digest, paper Th5B.3
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Aoki, M., Troppenz, U. (2017). Ultra-Fast Semiconductor Laser Sources. In: Venghaus, H., Grote, N. (eds) Fibre Optic Communication. Springer Series in Optical Sciences, vol 161. Springer, Cham. https://doi.org/10.1007/978-3-319-42367-8_4
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