Conclusions and Outlook

Abstract

A broad study on the physical mechanisms of filamentary-based resistive switching has been presented. Filamentary-based resistive switches represent an intriguing emerging class of electronic devices, with potential applications in future memory and logic. Based on ions migration and solid state electrochemical reactions at the nanoscale, their study is an exiting challenge for the scientific community. Relying on a wide range of experimental results, we have clarified the formation and rupture mechanisms of Cu- and ${V^{..}_o}$-based filaments. Fundamental studies using C-AFM have been combined to the results of integrated devices in order to transfer the understanding from a purely physical to a functional-applicative framework. Finally, this PhD work has proposed a novel three-dimensional analysis methodology (scalpel SPM) that has allowed for the first time the 3D observation of the CFs in state-of-the-art devices. This approach, that extends SPM for the analysis of confined volumes, employs a pioneering combination of sub-nm tip-induced material removal with contact-mode AFM techniques. A general comparison on CBRAM and VCM is combined with conclusions, challenges and potential future works in this closing chapter.

Science never solves a problem without creating ten more

—George Bernard Shaw