Abstract
The rapid development of the RF power electronics requires the introduction of wide band gap material due to its potential in high output power density. In this project, an X band (8.1 GHz) solid state power amplifier is designed with an output power of 25 W, bandwidth of 150 MHz as a part of an onboard transmitter. We report our result of an AlGaN/GaN HEMT power amplifier with the operating frequency in X band. There has been significant investment in the development of high performance microwave transistors and amplifiers based on GaN in a satellite communication system.
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Aliparast, P., Aliparast, S. (2016). Design of Solid State High Power Amplifiers for Leo Satellite Communication Systems. In: Karakoc, T., Ozerdem, M., Sogut, M., Colpan, C., Altuntas, O., Açıkkalp, E. (eds) Sustainable Aviation. Springer, Cham. https://doi.org/10.1007/978-3-319-34181-1_9
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DOI: https://doi.org/10.1007/978-3-319-34181-1_9
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