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ISS: An Iterative Scrubbing Strategy for Improving Memory Reliability Against MBU

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Human Centered Computing (HCC 2016)

Part of the book series: Lecture Notes in Computer Science ((LNISA,volume 9567))

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Abstract

As technology scales, multiple bit upsets (MBUs) have shown prominent effect, thus affecting the reliability of memory to a great extent. In order to mitigate MBUs errors, interleaving schemes together with single error correction (SEC) codes can be used to provide the greatest protection for advanced computer memories. In this paper, an algorithm of iterative scrubbing strategy (ISS) is proposed for the optimal interleaving distance (ID), which should be maximized under some conditions. The proposed algorithm should keep the complexity and the area overhead of designing ID as low as possible without compromising memory reliability. The key principle is to take advantage of the locality of MBU errors and to realize efficient scrubbing. The efficiency of the proposed approach will be compared with conventional strategy.

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Acknowledgment

This research work was partially supported by 863 Hi-Tech Program in China under grant No.2011AA040502, and the 973 Program in China under grant 2009CB320705. We thank all of the anonymous reviewers of this work for their valuable comments.

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Authors and Affiliations

  1. Key Laboratory of Computer Network and Information Integration, MOE, Department of Computer Science and Engineering, Southeast University, Nanjing, 210096, People’s Republic of China

    Hui Wang & Yun Wang

Authors
  1. Hui Wang
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  2. Yun Wang
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Correspondence to Yun Wang .

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Editors and Affiliations

  1. Wuhan, Hubei, China

    Qiaohong Zu

  2. Fujitsu Laboratories of Europe Ltd., Middlesex, United Kingdom

    Bo Hu

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Wang, H., Wang, Y. (2016). ISS: An Iterative Scrubbing Strategy for Improving Memory Reliability Against MBU. In: Zu, Q., Hu, B. (eds) Human Centered Computing. HCC 2016. Lecture Notes in Computer Science(), vol 9567. Springer, Cham. https://doi.org/10.1007/978-3-319-31854-7_38

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  • DOI: https://doi.org/10.1007/978-3-319-31854-7_38

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-31853-0

  • Online ISBN: 978-3-319-31854-7

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