Abstract
Instead of employing a mask for lithography as described in the previous chapter, it is also possible to directly draw fine features into a resist film by scanning a focused beam of energetic particles. For example, direct-write photolithography uses a focused beam of light to expose photoresist in the desired pattern followed by development and subsequent planar processing steps as outlined in Chap. 2. More commonly, such direct-write, or maskless lithography, approaches employ electron or ion beams in order to achieve higher resolution for nanoscale fabrication as described in the following sections.
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Notes
- 1.
It is also possible to use the interference pattern generated from two or more beams of light to create a periodic sub-wavelength photoresist exposure pattern.
- 2.
The entire system is enclosed within a vacuum column in order to contain the beam and reduce scattering.
- 3.
See e.g., J. Goldstein et al., Scanning Electron Microscopy and X-ray Microanalysis, 2007.
References
International Technology Roadmap for Semiconductors, 2013–2015; www.itrs2.net
L.E. Ocola, C. Rue, D. Maas, MRS Bull. 39, 336 (2014)
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Papadopoulos, C. (2016). Direct-Write Lithography Approaches. In: Nanofabrication. SpringerBriefs in Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-31742-7_3
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DOI: https://doi.org/10.1007/978-3-319-31742-7_3
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