Abstract
This work presents the fabrication and characterization of microbolometer array operating in the Terahertz region. The detector is based on a boron-doped hydrogenated amorphous silicon film (a-Si:B:H) employed as a thermosensor layer in bolometers arrays. The sensitive layer was deposited on the micromachined silicon wafer by the plasma-enhanced chemical vapor deposition technique. The array was fabricated using conventional lithography. The 5 × 5 microbolometer array was characterized at a base temperature of − 196 ∘C, using liquid nitrogen, under black body radiation from 0.1 to 10 THz frequency range. The responsivity value of 0.187 A/W is obtained at 3 V.
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Acknowledgements
The authors would like to thank Dr. David Hughes and Dr. Edgar Castillo for their technical support in the astrophysics laboratory, as well as Mr. Mauro Landa, Manuel Escobar, Adrian Itzmoyotl, and Ignacio Juarez for their assistance in the microelectronics laboratory.
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Orduña, A., Treviño, C.G., Torres, A., Delgado, R., Dominguez, M.A. (2017). Micromachined and Characterization of Cooled a-Si:B:H Microbolometer Array in the Terahertz Region. In: Pérez Campos, R., Contreras Cuevas, A., Esparza Muñoz, R. (eds) Characterization of Metals and Alloys. Springer, Cham. https://doi.org/10.1007/978-3-319-31694-9_16
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DOI: https://doi.org/10.1007/978-3-319-31694-9_16
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