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Photoluminescence of Nanocomposites Obtained by Heat Treatment of GaS, GaSe, GaTe and InSe Single Crystals in Cd and Zn Vapor

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Abstract

The photoluminescence (PL) spectra of GaS, GaSe, GaTe and InSe semiconductors used as the basis materials to obtain nanocomposite by heat treatment in Zn and Cd vapor were studied. The PL spectra of ZnSGaS, CdSeGaSe, CdSeInSe, ZnSeInSe composites consist of wide bands covering a wide range of wavelengths in the antistokes region for CdSe, ZnSe and GaS crystallites from composites. The antistokes branches of spectra are interpreted as the shift of PL bands to high energies for nanosized crystallites.

Keywords

  • AIIIBVI and AIIBVI semiconductors
  • Lamellar semiconductor
  • Heat treatment
  • Intercalation
  • Nanoparticles
  • Nanocomposites
  • Polycrystalline compound
  • Clusters
  • Photoluminescence
  • Recombination
  • Exciton emission
  • Impurity band
  • Luminescence centers
  • Acceptor and donor levels
  • Carrier recombination
  • Thermal quenching

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Evtodiev, I. et al. (2016). Photoluminescence of Nanocomposites Obtained by Heat Treatment of GaS, GaSe, GaTe and InSe Single Crystals in Cd and Zn Vapor. In: Tiginyanu, I., Topala, P., Ursaki, V. (eds) Nanostructures and Thin Films for Multifunctional Applications. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-30198-3_13

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