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Nanostructures and Thin Films for Multifunctional Applications pp 381–413Cite as

Optical and Photoelectric Properties of GaS, GaSe, GaTe and InSe Semiconductors and Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor

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Abstract

GaS is an n-type semiconductor with indirect bandgap at 293 K equal to 2.5 eV. The average energy of phonons active in the formation of the edge of indirect absorption band is equal to 44.5 meV. The energy of transverse optical phonon of 23.9 meV was determined from the absorption spectra in the vibrations region of monophononic and crystal lattice. The phonons with average energy equal to 17 meV participate in the formation of the edge of indirect bandgap of GaSe crystals in absorption spectra. Direct bandgap width at 293 K is equal to 2.020 eV and 1.320 eV in GaSe and InSe, respectively. GaTe is a p-type semiconductor with direct bandgap width at 293 K equal to 1.6 eV. The edge of direct absorption in GaSe, GaTe and InSe lamellar crystals is formed by excitons with binding energy of 22 meV, 17 meV and 16 meV, respectively. Heterojonctions consisting of Cd and Zn chalcogenides and lamellar AIIIBVI semiconductors that are photosensitive in UV-VIS and NIR regions of spectrum were obtained by heat treatment of GaS, GaSe, GaTe and InSe single crystals in Cd and Zn vapor.

Keywords

  • AIIIBVI and AIIBVI semiconductors
  • Layered semiconductors
  • Heat treatment
  • Intercalation
  • Nanoparticles
  • Nanocomposites
  • Polycrystalline compound
  • Clusters
  • Thin layers
  • Optical absorption
  • Excitonic absorption
  • Direct exciton
  • Transmittance
  • Reflectance
  • Diffuse reflectance
  • Absorption coefficient
  • Refractive index
  • Raman and IR spectra
  • Vibration modes
  • Photoconductivity
  • Heterojunctions

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Authors and Affiliations

  1. Laboratory of Photonics and Physical Metrology, Department of Physics and Engineering, Moldova State University, Chisinau, Moldova

    Igor Evtodiev, Valeriu Kantser, Dumitru Untila, Irina Rotaru, Liliana Dmitroglo, Silvia Evtodiev & Mihail Caraman

  2. “Vasile Alecsandri” University of Bacau, Bacau, Romania

    Iuliana Caraman

  3. Institute of Electronic Engineering and Nanotechnologies “D. Ghitu”, Academy of Sciences of Moldova, Chisinau, Moldova

    Igor Evtodiev, Valeriu Kantser & Dumitru Untila

  4. University of European Political and Economical Studies “Constantin Stere”, Stefan cel Mare si Sfint bd 200, MD-2004, Chisinau, Moldova

    Silvia Evtodiev

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  1. Igor Evtodiev
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  1. Academy of Sciences of Moldova, Chisinau, Moldova

    Ion Tiginyanu

  2. Alecu Russo Balti State University, Balti, Moldova

    Pavel Topala

  3. Laboratory of Nanotechnologies, Academy of Sciences of Moldova, Chisinau, Moldova

    Veaceslav Ursaki

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Evtodiev, I. et al. (2016). Optical and Photoelectric Properties of GaS, GaSe, GaTe and InSe Semiconductors and Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor. In: Tiginyanu, I., Topala, P., Ursaki, V. (eds) Nanostructures and Thin Films for Multifunctional Applications. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-30198-3_12

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