Abstract
In this chapter, we provide an overview of the growing field of the two-dimensional electron gas in oxide heterostructures. The discovery of the high mobility electron gas at the oxide-oxide interface has spurred subsequent investigations which draw from the large body of work on polar oxide surfaces and thin films. We discuss the three main mechanisms of electronic reconstruction, oxygen vacancy formation, and cation exchange in order to address the question, “How can the interface between two insulators be conducting?” Throughout the chapter, in addition to the model LaAlO3/SrTiO3 system, we provide the reader with a sampling of what has been learned from other oxide heterostructures through both experiment and theory.
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Demkov, A.A., Kormondy, K.J., Fredrickson, K.D. (2016). Two-Dimensional Electron Gas at Oxide Interfaces. In: Netzer, F., Fortunelli, A. (eds) Oxide Materials at the Two-Dimensional Limit. Springer Series in Materials Science, vol 234. Springer, Cham. https://doi.org/10.1007/978-3-319-28332-6_12
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